Inventor

RAZAVIEH ALI

US19 patents

⚠️ This page may combine multiple inventors who share the name “RAZAVIEH ALI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAZAVIEH ALI

GLOBALFOUNDRIES US INC

Fin-based lateral bipolar junction transistor with reduced base resistance and method

Vertical field effect transistor

Transistor comprising a matrix of nanowires and methods of making such a transistor

Field effect transistor with vertical nanowire in channel region and bottom spacer between the vertical nanowire and gate dielectric material

Air spacer structures

Epitaxial semiconductor material regions for transistor devices and methods of forming same

Epitaxial semiconductor material regions for transistor devices and methods of forming same

Lateral bipolar junction transistor device and method of making such a device

IBM

Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system

Steep-switch field effect transistor with integrated bi-stable resistive system

Steep-switch field effect transistor with integrated bi-stable resistive system

Steep-switch field effect transistor with integrated bi-stable resistive system

Steep-switch field effect transistor with integrated bi-stable resistive system

Steep-switch field effect transistor with integrated bi-stable resistive system

Steep-switch field effect transistor with integrated bi-stable resistive system

GLOBALFOUNDRIES INC

Complementary FETs with wrap around contacts and method of forming same

Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device

Complementary FETs with wrap around contacts and methods of forming same

Fin-type field-effect transistors including a two-dimensional material