Inventor
CHANG CHAO-YUAN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHAO-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11121078B2Sep 14, 2021
SRAM having irregularly shaped metal lines
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12349330B2Jul 1, 2025
Shared pick-up regions for memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190943B2Jan 7, 2025
SRAM devices with reduced coupling capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984400B2May 14, 2024
Method of fabricating a semiconductor device including multiple contacts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11968817B2Apr 23, 2024
Source/drain contact having a protruding segment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682451B2Jun 20, 2023
SRAM devices with reduced coupling capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264393B2Mar 1, 2022
Source/drain contact having a protruding segment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114153B2Sep 7, 2021
SRAM devices with reduced coupling capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031336B2Jun 8, 2021
Semiconductor memory device having contact element of rectangular shape
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12080342B2Sep 3, 2024
Static random access memory (SRAM) with a pre- charge assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12227865B2Feb 18, 2025
Plating apparatus and method for electroplating wafer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations53
US11401624B2Aug 2, 2022
Plating apparatus and method for electroplating wafer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations53
US12219747B2Feb 4, 2025
Memory active region layout for improving memory performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12369294B2Jul 22, 2025
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49