Inventor
MORI KAORU
74 patents
⚠️ This page may combine multiple inventors who share the name “MORI KAORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
18 patentsUS6628564B1Sep 30, 2003
Semiconductor memory device capable of driving non-selected word lines to first and second potentials
FUJITSU LTD63 citations96
US6115316ASep 5, 2000
Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type
FUJITSU LTD51 citations96
US6834021B2Dec 21, 2004
Semiconductor memory having memory cells requiring refresh operation
FUJITSU LTD27 citations93
US6707730B2Mar 16, 2004
Semiconductor memory device with efficient and reliable redundancy processing
FUJITSU LTD19 citations93
US6236605B1May 22, 2001
Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier
FUJITSU LTD23 citations93
US7079443B2Jul 18, 2006
Semiconductor device
FUJITSU LTD18 citations92
US6618320B2Sep 9, 2003
Semiconductor memory device
FUJITSU LTD46 citations92
US6262930B1Jul 17, 2001
Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type
FUJITSU LTD24 citations92
US7321517B2Jan 22, 2008
Semiconductor memory device
FUJITSU LTD10 citations84
US7099208B2Aug 29, 2006
Semiconductor memory automatically carrying out refresh operation
FUJITSU LTD15 citations84
US7394709B2Jul 1, 2008
Memory device
FUJITSU LTD5 citations74
US7379370B2May 27, 2008
Semiconductor memory
FUJITSU LTD8 citations74
US6791354B2Sep 14, 2004
Semiconductor integrated circuit
FUJITSU LTD11 citations74
US6611472B2Aug 26, 2003
Memory circuit for preventing rise of cell array power source
FUJITSU LTD8 citations74
US7286434B2Oct 23, 2007
Semiconductor memory device with shift register-based refresh address generation circuit
FUJITSU LTD7 citations72
US7145825B2Dec 5, 2006
Semiconductor memory device with shift register-based refresh address generation circuit
FUJITSU LTD5 citations72
US7362630B2Apr 22, 2008
Semiconductor memory
FUJITSU LTD4 citations63
US7196951B2Mar 27, 2007
Semiconductor memory
FUJITSU LTD2 citations63
WINBOND ELECTRONICS CORP
7 patentsUS11056207B2Jul 6, 2021
Efuse circuit and operation method thereof
WINBOND ELECTRONICS CORP3 citations73
US10957378B1Mar 23, 2021
Control circuit and control method thereof for pseudo static random access memory
WINBOND ELECTRONICS CORP3 citations73
US10418075B2Sep 17, 2019
Bit line power supply apparatus
WINBOND ELECTRONICS CORP4 citations73
US12400695B2Aug 26, 2025
Semiconductor memory with adjustment circuit and method for controlling a semiconductor memory
WINBOND ELECTRONICS CORP0 citations63
US11842765B2Dec 12, 2023
Semiconductor memory device operates asynchronously with external clock signal
WINBOND ELECTRONICS CORP0 citations63
US11488652B2Nov 1, 2022
Semiconductor memory device to control operating timing based on temperature of the memory device
WINBOND ELECTRONICS CORP0 citations63
US11367470B2Jun 21, 2022
Memory controller
WINBOND ELECTRONICS CORP0 citations63
NEC CORP
6 patentsUS7242047B2Jul 10, 2007
Magnetic memory adopting synthetic antiferromagnet as free magnetic layer
NEC CORP12 citations84
US7187525B2Mar 6, 2007
Magnetoresistive device and method for manufacturing same
NEC CORP12 citations83
US8368175B2Feb 5, 2013
Capacitor, semiconductor device having the same, and method of producing them
NEC CORP8 citations82
US7280029B2Oct 9, 2007
Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
NEC CORP7 citations74
US7271698B2Sep 18, 2007
Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
NEC CORP4 citations63
US7099184B2Aug 29, 2006
Magnetic random access memory
NEC CORP4 citations63
FUJITSU MICROELECTRONICS LTD
4 patentsUS7583553B2Sep 1, 2009
Semiconductor memory and refresh cycle control method
FUJITSU MICROELECTRONICS LTD41 citations93
US7675773B2Mar 9, 2010
Semiconductor memory, test method of semiconductor memory and system
FUJITSU MICROELECTRONICS LTD9 citations84
US7652941B2Jan 26, 2010
Memory device
FUJITSU MICROELECTRONICS LTD10 citations84
US7688659B2Mar 30, 2010
Semiconductor memory capable of testing a failure before programming a fuse circuit and method thereof
FUJITSU MICROELECTRONICS LTD6 citations63
SAGAMI CHEM RES
3 patentsTOYO SODA MFG CO LTD
3 patentsUS4256836AMar 17, 1981
Addition compound of dipeptide derivative and amino acid derivative
TOYO SODA MFG CO LTD20 citations81
US4165311AAug 21, 1979
Addition compound of dipeptide derivative and amino acid derivative
TOYO SODA MFG CO LTD30 citations81
US4436925AMar 13, 1984
Addition compound of dipeptide derivative and amino acid derivative
TOYO SODA MFG CO LTD11 citations71
FUJITSU SEMICONDUCTOR LTD
2 patentsTORAY INDUSTRIES
1 patentDAINIPPON INK & CHEMICALS
1 patentNOK CORP
1 patentSUGIBAYASHI TADAHIKO
1 patentMORI KAORU
1 patentKARIYADA EIJI
1 patentSPANSION LLC
1 patentShowing the top 50 of 74 patents by PatentIndex Score.