P

Inventor

YONEZAWA TOSHIO

JP57 patents
⚠️ This page may combine multiple inventors who share the name “YONEZAWA TOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO SHIBAURA ELECTRIC CO

30 patents
US4507673AMar 26, 1985

Semiconductor memory device

TOKYO SHIBAURA ELECTRIC CO174 citations99
US4561009ADec 24, 1985

Semiconductor device

TOKYO SHIBAURA ELECTRIC CO41 citations96
US4520041AMay 28, 1985

Method for forming metallization structure having flat surface on semiconductor substrate

TOKYO SHIBAURA ELECTRIC CO65 citations96
US4334349AJun 15, 1982

Method of producing semiconductor device

TOKYO SHIBAURA ELECTRIC CO64 citations96
US4610079ASep 9, 1986

Method of dicing a semiconductor wafer

TOKYO SHIBAURA ELECTRIC CO111 citations94
US4636832AJan 13, 1987

Semiconductor device with an improved bonding section

TOKYO SHIBAURA ELECTRIC CO41 citations92
US4485393ANov 27, 1984

Semiconductor device with selective nitride layer over channel stop

TOKYO SHIBAURA ELECTRIC CO37 citations92
US4433004AFeb 21, 1984

Semiconductor device and a method for manufacturing the same

TOKYO SHIBAURA ELECTRIC CO32 citations92
US4379726AApr 12, 1983

Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition

TOKYO SHIBAURA ELECTRIC CO33 citations92
US4589004AMay 13, 1986

Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other

TOKYO SHIBAURA ELECTRIC CO54 citations91
US4161743AJul 17, 1979

Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat

TOKYO SHIBAURA ELECTRIC CO49 citations91
US4351894ASep 28, 1982

Method of manufacturing a semiconductor device using silicon carbide mask

TOKYO SHIBAURA ELECTRIC CO24 citations81
US4479830AOct 30, 1984

Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker

TOKYO SHIBAURA ELECTRIC CO9 citations74
US4462856AJul 31, 1984

System for etching a metal film on a semiconductor wafer

TOKYO SHIBAURA ELECTRIC CO10 citations74
US4415372ANov 15, 1983

Method of making transistors by ion implantations, electron beam irradiation and thermal annealing

TOKYO SHIBAURA ELECTRIC CO7 citations74
US4667218AMay 19, 1987

NPN transistor with base double doped with arsenic and boron

TOKYO SHIBAURA ELECTRIC CO6 citations73
US4566174AJan 28, 1986

Semiconductor device and method for manufacturing the same

TOKYO SHIBAURA ELECTRIC CO11 citations73
US4542400ASep 17, 1985

Semiconductor device with multi-layered structure

TOKYO SHIBAURA ELECTRIC CO19 citations73
US4263067AApr 21, 1981

Fabrication of transistors having specifically paired dopants

TOKYO SHIBAURA ELECTRIC CO10 citations73
US4240096ADec 16, 1980

Fluorine-doped P type silicon

TOKYO SHIBAURA ELECTRIC CO14 citations73
US4560642ADec 24, 1985

Method of manufacturing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO8 citations72
US4521256AJun 4, 1985

Method of making integrated devices having long and short minority carrier lifetimes

TOKYO SHIBAURA ELECTRIC CO7 citations72
US4224636ASep 23, 1980

Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

TOKYO SHIBAURA ELECTRIC CO9 citations72
US4123564AOct 31, 1978

Method of producing semiconductor device

TOKYO SHIBAURA ELECTRIC CO13 citations72
US4403392ASep 13, 1983

Method of manufacturing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO9 citations71
US4146413AMar 27, 1979

Method of producing a P-N junction utilizing polycrystalline silicon

TOKYO SHIBAURA ELECTRIC CO16 citations69
US4587928AMay 13, 1986

Apparatus for producing a semiconductor device

TOKYO SHIBAURA ELECTRIC CO5 citations63
US4426234AJan 17, 1984

Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing

TOKYO SHIBAURA ELECTRIC CO6 citations63
US4200969AMay 6, 1980

Semiconductor device with multi-layered metalizations

TOKYO SHIBAURA ELECTRIC CO6 citations63
US4461825AJul 24, 1984

Method for forming resist pattern

TOKYO SHIBAURA ELECTRIC CO6 citations60

MITSUBISHI HEAVY IND LTD

6 patents

TOSHIBA KK

3 patents

PETOCA LTD

3 patents

TAKEMOTO OIL & FAT CO LTD

2 patents

TAKENAKA CORP

1 patent

KEIHIN RYOKO CONCRETE IND CORP

1 patent

KONO TAKAO

1 patent

KANTO KAGAKU

1 patent

MITSUBISHI METAL CORP

1 patent

TAKAHASHI KOUICHI

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.