Inventor
YONEZAWA TOSHIO
JP57 patents
⚠️ This page may combine multiple inventors who share the name “YONEZAWA TOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
30 patentsUS4507673AMar 26, 1985
Semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO174 citations99
US4561009ADec 24, 1985
Semiconductor device
TOKYO SHIBAURA ELECTRIC CO41 citations96
US4520041AMay 28, 1985
Method for forming metallization structure having flat surface on semiconductor substrate
TOKYO SHIBAURA ELECTRIC CO65 citations96
US4334349AJun 15, 1982
Method of producing semiconductor device
TOKYO SHIBAURA ELECTRIC CO64 citations96
US4610079ASep 9, 1986
Method of dicing a semiconductor wafer
TOKYO SHIBAURA ELECTRIC CO111 citations94
US4636832AJan 13, 1987
Semiconductor device with an improved bonding section
TOKYO SHIBAURA ELECTRIC CO41 citations92
US4485393ANov 27, 1984
Semiconductor device with selective nitride layer over channel stop
TOKYO SHIBAURA ELECTRIC CO37 citations92
US4433004AFeb 21, 1984
Semiconductor device and a method for manufacturing the same
TOKYO SHIBAURA ELECTRIC CO32 citations92
US4379726AApr 12, 1983
Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition
TOKYO SHIBAURA ELECTRIC CO33 citations92
US4589004AMay 13, 1986
Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other
TOKYO SHIBAURA ELECTRIC CO54 citations91
US4161743AJul 17, 1979
Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
TOKYO SHIBAURA ELECTRIC CO49 citations91
US4351894ASep 28, 1982
Method of manufacturing a semiconductor device using silicon carbide mask
TOKYO SHIBAURA ELECTRIC CO24 citations81
US4479830AOct 30, 1984
Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker
TOKYO SHIBAURA ELECTRIC CO9 citations74
US4462856AJul 31, 1984
System for etching a metal film on a semiconductor wafer
TOKYO SHIBAURA ELECTRIC CO10 citations74
US4415372ANov 15, 1983
Method of making transistors by ion implantations, electron beam irradiation and thermal annealing
TOKYO SHIBAURA ELECTRIC CO7 citations74
US4667218AMay 19, 1987
NPN transistor with base double doped with arsenic and boron
TOKYO SHIBAURA ELECTRIC CO6 citations73
US4566174AJan 28, 1986
Semiconductor device and method for manufacturing the same
TOKYO SHIBAURA ELECTRIC CO11 citations73
US4542400ASep 17, 1985
Semiconductor device with multi-layered structure
TOKYO SHIBAURA ELECTRIC CO19 citations73
US4263067AApr 21, 1981
Fabrication of transistors having specifically paired dopants
TOKYO SHIBAURA ELECTRIC CO10 citations73
US4240096ADec 16, 1980
Fluorine-doped P type silicon
TOKYO SHIBAURA ELECTRIC CO14 citations73
US4560642ADec 24, 1985
Method of manufacturing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO8 citations72
US4521256AJun 4, 1985
Method of making integrated devices having long and short minority carrier lifetimes
TOKYO SHIBAURA ELECTRIC CO7 citations72
US4224636ASep 23, 1980
Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer
TOKYO SHIBAURA ELECTRIC CO9 citations72
US4123564AOct 31, 1978
Method of producing semiconductor device
TOKYO SHIBAURA ELECTRIC CO13 citations72
US4403392ASep 13, 1983
Method of manufacturing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO9 citations71
US4146413AMar 27, 1979
Method of producing a P-N junction utilizing polycrystalline silicon
TOKYO SHIBAURA ELECTRIC CO16 citations69
US4587928AMay 13, 1986
Apparatus for producing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO5 citations63
US4426234AJan 17, 1984
Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing
TOKYO SHIBAURA ELECTRIC CO6 citations63
US4200969AMay 6, 1980
Semiconductor device with multi-layered metalizations
TOKYO SHIBAURA ELECTRIC CO6 citations63
US4461825AJul 24, 1984
Method for forming resist pattern
TOKYO SHIBAURA ELECTRIC CO6 citations60
MITSUBISHI HEAVY IND LTD
6 patentsUS4798632AJan 17, 1989
Ni-based alloy and method for preparing same
MITSUBISHI HEAVY IND LTD57 citations93
US6190785B1Feb 20, 2001
Spray coating powder material and high-temperature components coated therewith
MITSUBISHI HEAVY IND LTD8 citations72
US6245163B1Jun 12, 2001
Austenitic stainless steel resistant to neutron-irradiation-induced deterioration and method of making thereof
MITSUBISHI HEAVY IND LTD2 citations60
US5244513ASep 14, 1993
Fe-cr-ni-si shape memory alloys with excellent stress corrosion cracking resistance
MITSUBISHI HEAVY IND LTD4 citations59
US4715909ADec 29, 1987
Nickel-chromium alloy in stress corrosion cracking resistance
MITSUBISHI HEAVY IND LTD4 citations59
US5976275ANov 2, 1999
High-nickel austenitic stainless steel resistant to degradation by neutron irradiation
MITSUBISHI HEAVY IND LTD5 citations57
TOSHIBA KK
3 patentsUS4618878AOct 21, 1986
Semiconductor device having a multilayer wiring structure using a polyimide resin
TOSHIBA KK268 citations99
US6937913B2Aug 30, 2005
Product design process and product design apparatus
TOSHIBA KK34 citations88
US4778772AOct 18, 1988
Method of manufacturing a bipolar transistor
TOSHIBA KK19 citations81
PETOCA LTD
3 patentsUS5855663AJan 5, 1999
Carbon fibers for reinforcement of cement and cement composite material
PETOCA LTD49 citations94
US5652058AJul 29, 1997
Carbon fiber rovings for reinforcement of concrete
PETOCA LTD39 citations91
US5686181ANov 11, 1997
Carbon fibers for reinforcement of cement and cement composite material
PETOCA LTD13 citations72
TAKEMOTO OIL & FAT CO LTD
2 patentsTAKENAKA CORP
1 patentKEIHIN RYOKO CONCRETE IND CORP
1 patentKONO TAKAO
1 patentKANTO KAGAKU
1 patentMITSUBISHI METAL CORP
1 patentTAKAHASHI KOUICHI
1 patentShowing the top 50 of 57 patents by PatentIndex Score.