Inventor

KURTZ ANTHONY D

US292 patents

⚠️ This page may combine multiple inventors who share the name “KURTZ ANTHONY D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KURTZ ANTHONY D

KULITE SEMICONDUCTOR PRODUCTS

Sensors for use in high vibrational applications and methods for fabricating same

Multi-level semiconductor structures having environmentally isolated elements

Fusion bonding technique for use in fabricating semiconductor devices

Media compatible pressure transducer

Multiple axis load cell controller

Joystick sensor apparatus

Stopped leadless differential sensor

Compensated pressure transducer employing digital processing techniques

Ultra high temperature hermetically protected wirebonded piezoresistive transducer

Method and apparatus for the determination of absolute pressure and differential pressure therefrom

Ultra high temperature transducer structure

Ultra high temperature transducer structure

Oil-filled pressure transducer

Hermetically sealed absolute and differential pressure transducer

Hermetically sealed ultra high temperature silicon carbide pressure transducers and method for fabricating same

Method for etching of silicon carbide semiconductor using selective etching of different conductivity types

Ambient temperature compensation for semiconductor transducer structures

Support structure for a semiconductor pressure transducer

Porous silicon carbide (SIC) semiconductor device

Method for fabricating a beam pressure sensor employing dielectrically isolated resonant beams

Method of fabricating porous silicon carbide (SiC)

Semiconductor structures having environmentally isolated elements and method for making the same

Fabricating porous silicon carbide

Porous silicon carbide (SiC) semiconductor device

High temperature transducers and methods of fabricating the same employing silicon carbide

Integral transducer structures employing high conductivity surface features

Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus

Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas

Semiconductor transducers employing flexure frames

Methods of fabricating low pressure silicon transducers

Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same

Ultra thin surface mount wafer sensor structures and methods for fabricating same

Ultra thin surface mount wafer sensor structures and methods for fabricating same

Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof

Hermetically sealed transducers and methods for producing the same

High pressure piezoresistive transducer

Transducer structures employing ceramic substrates and diaphragms

Leadless oil filled pressure transducer

Combined wet-wet differential and gage transducer employing a common housing

Moisture resistant pressure sensors

High accuracy, high temperature, redundant media protected differential transducers

Moisture resistant differential pressure sensors

Combined absolute differential transducer

High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane

Ultra-miniature, high temperature, capacitive inductive pressure transducer

Method for fabricating a single chip multiple range pressure transducer device

Double stop structure for a pressure transducer

Pressure transducer fabricated from beta silicon carbide

(unassigned)

Weight monitoring computer

KURTZ ANTHONY D

Pressure transducer utilizing non-lead containing frit