P

Inventor

NEMANI SRINIVAS

US36 patents
⚠️ This page may combine multiple inventors who share the name “NEMANI SRINIVAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

32 patents
US6465366B1Oct 15, 2002

Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers

APPLIED MATERIALS INC315 citations99
US6413583B1Jul 2, 2002

Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound

APPLIED MATERIALS INC725 citations99
US6347636B1Feb 19, 2002

Methods and apparatus for gettering fluorine from chamber material surfaces

APPLIED MATERIALS INC579 citations99
US6114216ASep 5, 2000

Methods for shallow trench isolation

APPLIED MATERIALS INC230 citations99
US5963840AOct 5, 1999

Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions

APPLIED MATERIALS INC200 citations99
US5935340AAug 10, 1999

Method and apparatus for gettering fluorine from chamber material surfaces

APPLIED MATERIALS INC206 citations99
US5812403ASep 22, 1998

Methods and apparatus for cleaning surfaces in a substrate processing system

APPLIED MATERIALS INC459 citations99
US10923367B2Feb 16, 2021

Process chamber for etching low K and other dielectric films

APPLIED MATERIALS INC41 citations98
US9287095B2Mar 15, 2016

Semiconductor system assemblies and methods of operation

APPLIED MATERIALS INC153 citations98
US6537733B2Mar 25, 2003

Method of depositing low dielectric constant silicon carbide layers

APPLIED MATERIALS INC292 citations98
US6352591B1Mar 5, 2002

Methods and apparatus for shallow trench isolation

APPLIED MATERIALS INC112 citations98
US9865484B1Jan 9, 2018

Selective etch using material modification and RF pulsing

APPLIED MATERIALS INC109 citations97
US6348099B1Feb 19, 2002

Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions

APPLIED MATERIALS INC71 citations96
US7200460B2Apr 3, 2007

Method of depositing low dielectric constant silicon carbide layers

APPLIED MATERIALS INC17 citations92
US10675581B2Jun 9, 2020

Gas abatement apparatus

APPLIED MATERIALS INC19 citations91
US6090206AJul 18, 2000

Throttle valve providing enhanced cleaning

APPLIED MATERIALS INC34 citations91
US10790183B2Sep 29, 2020

Selective oxidation for 3D device isolation

APPLIED MATERIALS INC14 citations85
US9666414B2May 30, 2017

Process chamber for etching low k and other dielectric films

APPLIED MATERIALS INC9 citations84
US7176105B2Feb 13, 2007

Dielectric gap fill with oxide selectively deposited over silicon liner

APPLIED MATERIALS INC14 citations84
US6589888B2Jul 8, 2003

Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers

APPLIED MATERIALS INC14 citations84
US10096466B2Oct 9, 2018

Pulsed plasma for film deposition

APPLIED MATERIALS INC4 citations73
US6855484B2Feb 15, 2005

Method of depositing low dielectric constant silicon carbide layers

APPLIED MATERIALS INC10 citations73
US10943779B2Mar 9, 2021

Method and system for three-dimensional (3D) structure fill

APPLIED MATERIALS INC2 citations72
US10475655B2Nov 12, 2019

Selective deposition of metal silicides

APPLIED MATERIALS INC2 citations70
US10096496B2Oct 9, 2018

Process chamber for etching low K and other dielectric films

APPLIED MATERIALS INC1 citations63
US12057329B2Aug 6, 2024

Selective etch using material modification and RF pulsing

APPLIED MATERIALS INC0 citations62
US11410860B2Aug 9, 2022

Process chamber for etching low k and other dielectric films

APPLIED MATERIALS INC0 citations62
US10964527B2Mar 30, 2021

Residual removal

APPLIED MATERIALS INC0 citations62
US11110383B2Sep 7, 2021

Gas abatement apparatus

APPLIED MATERIALS INC0 citations59
US6511924B2Jan 28, 2003

Method of forming a silicon oxide layer on a substrate

APPLIED MATERIALS INC5 citations58
US10549324B2Feb 4, 2020

Method and apparatus for backside cleaning of substrates

APPLIED MATERIALS INC0 citations51
US12305279B2May 20, 2025

Ultra high-k hafnium oxide and hafnium zirconium oxide films

APPLIED MATERIALS INC0 citations45

VARIAN SEMICONDUCTOR EQUIPMENT

1 patent

YIEH ELLIE

1 patent

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT

1 patent

COMMISSARIAT ENERGIE ATOMIQUE

1 patent