Inventor
NISHIOKA KOICHI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “NISHIOKA KOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
7 patentsUS5648885AJul 15, 1997
Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer
HITACHI LTD111 citations97
US6903906B2Jun 7, 2005
Magnetic head with a lamination stack to control the magnetic domain
HITACHI LTD17 citations83
US6120919ASep 19, 2000
Magnetic head
HITACHI LTD5 citations73
US7230803B2Jun 12, 2007
Magnetic head with magnetic domain control structure having anti-ferromagnetic layer and plural magnetic layers
HITACHI LTD4 citations62
US6697235B2Feb 24, 2004
Magnetoresistive head and magnetic recoding/reproducing apparatus using the same
HITACHI LTD6 citations62
US6319622B1Nov 20, 2001
Magnetic head
HITACHI LTD3 citations62
US6717778B2Apr 6, 2004
Spin-valve giant magnetoresistive head and method of manufacturing the same
HITACHI LTD4 citations60
HITACHI GLOBAL STORAGE TECH
6 patentsUS6741433B1May 25, 2004
Magneto-resistive head and magnetic tunnel junction magneto-resistive head having plural ferromagnetic layers and an anitferromagnetically coupling layer
HITACHI GLOBAL STORAGE TECH37 citations92
US7016170B2Mar 21, 2006
Magnetic head and tunnel junction magneto-resistive head having plural ferromagnetic layers associated with an antiferromagnetic coupling layer for magnetically biasing the sensing free layer
HITACHI GLOBAL STORAGE TECH13 citations84
US7159304B2Jan 9, 2007
Method of manufacturing a spin-valve giant magnetoresistive head
HITACHI GLOBAL STORAGE TECH6 citations71
US7209326B2Apr 24, 2007
Magnetoresistive head and manufacturing method thereof
HITACHI GLOBAL STORAGE TECH2 citations63
US7623323B2Nov 24, 2009
Magnetoresistive head and read/write separation-type magnetic head
HITACHI GLOBAL STORAGE TECH2 citations62
US7408747B2Aug 5, 2008
Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing
HITACHI GLOBAL STORAGE TECH1 citations51
UNIV TOHOKU
4 patentsUS11770981B2Sep 26, 2023
Magnetoresistive element and magnetic memory
UNIV TOHOKU1 citations62
US12402537B2Aug 26, 2025
Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element
UNIV TOHOKU0 citations52
US11963458B2Apr 16, 2024
Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory
UNIV TOHOKU0 citations52
US11462253B2Oct 4, 2022
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations52
HITACHI GLOBAL STORAGE TECH NL
3 patentsUS8351163B2Jan 8, 2013
Tunneling magnetoresistance read head having a cofe interface layer and methods for producing the same
HITACHI GLOBAL STORAGE TECH NL2 citations63
US7848064B2Dec 7, 2010
Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing
HITACHI GLOBAL STORAGE TECH NL1 citations51
US7957109B2Jun 7, 2011
Magnetic head of magnetoresistance effect type with high resistance to external stress
HITACHI GLOBAL STORAGE TECH NL0 citations39
NISHIOKA KOICHI
3 patentsUS8254067B2Aug 28, 2012
Tunnel junction type magneto-resistive head
NISHIOKA KOICHI3 citations59
US8879214B2Nov 4, 2014
Half metal trilayer TMR reader with negative interlayer coupling
NISHIOKA KOICHI1 citations50
US8284526B2Oct 9, 2012
Tunneling junction magnetoresistive effect element and manufacturing method thereof
NISHIOKA KOICHI1 citations49