Inventor

HU GUOHAN

US75 patents

⚠️ This page may combine multiple inventors who share the name “HU GUOHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU GUOHAN

IBM

Perpendicular magnetic anisotrophy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory

Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory

Perpendicular magnetic anisotropy BCC multilayers

Perpendicular magnetic anisotropy BCC multilayers

Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density

Amorphous spin diffusion layer for modified double magnetic tunnel junction structure

Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM

Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices

Method for forming a planar, closed loop magnetic structure

In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers

Simplified double magnetic tunnel junctions

Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention

Thin reference layer for STT MRAM

Fabricating a cap layer for a magnetic random access memory (MRAM) device

Boron segregation in magnetic tunnel junctions

Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer

Perpendicular magnetic anisotropy BCC multilayers

In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions

Spin torque MRAM having perpendicular magnetization with oxide interface

High temperature endurable MTJ stack

Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures

Light element doped low magnetic moment material spin torque transfer MRAM

Reactive serial resistance reduction for magnetoresistive random-access memory devices

Magnetic exchange coupled MTJ free layer having low switching current and high data retention

Planar solenoid inductors with antiferromagnetic pinned cores

Method for forming a planar solenoid inductor

Thin reference layer for STT MRAM

Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention

Double synthetic antiferromagnet using rare earth metals and transition metals

Current constriction for spin torque MRAM

Magnetic materials with enhanced perpendicular anisotropy energy density for STT-RAM

Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density

Thermal spin torqure transfer magnetoresistive random access memory

Ordered alloy magnetic tunnel junction with simplified seed structure

Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices

MRAM structure with enhanced magnetics using seed engineering

Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM

In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers

STT MRAM matertails with heavy metal insertion

Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM

HITACHI GLOBAL STORAGE TECH

Patterned multilevel perpendicular magnetic recording media

Magnetic recording system with patterned multilevel perpendicular magnetic recording

Method for magnetic recording on patterned multilevel perpendicular media using variable write current

Method for magnetic recording on patterned multilevel perpendicular media using thermal assistance and fixed write current

HU GUOHAN

Magnetic tunnel junction with spacer layer for spin torque switched MRAM

Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory

Optimized free layer for spin torque magnetic random access memory

Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack

ABRAHAM DAVID W

Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effect

WORLEDGE DANIEL C

Spin-torque based memory device using a magnesium oxide tunnel barrier