Inventor
HAMANAKA NOBUAKI
JP11 patents
⚠️ This page may combine multiple inventors who share the name “HAMANAKA NOBUAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
6 patentsUS6436783B1Aug 20, 2002
Method of forming MOS transistor
NEC CORP38 citations92
US6337272B1Jan 8, 2002
Method of manufacturing a semiconductor device
NEC CORP20 citations91
US6548421B1Apr 15, 2003
Method for forming a refractory-metal-silicide layer in a semiconductor device
NEC CORP4 citations62
US6544890B2Apr 8, 2003
Process for fabricating semiconductor device having silicide layer with low resistance and uniform profile and sputtering system used therein
NEC CORP5 citations61
US6482737B2Nov 19, 2002
Fabrication method of implanting silicon-ions into the silicon substrate
NEC CORP5 citations61
US6271549B1Aug 7, 2001
Process for fabricating a metal silicide layer of a semiconductor and apparatus
NEC CORP5 citations61
NEC ELECTRONICS CORP
4 patentsUS7217654B2May 15, 2007
Semiconductor device and method of manufacturing the same
NEC ELECTRONICS CORP18 citations83
US6569766B1May 27, 2003
Method for forming a silicide of metal with a high melting point in a semiconductor device
NEC ELECTRONICS CORP5 citations62
US7199058B2Apr 3, 2007
Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device
NEC ELECTRONICS CORP4 citations61
US6821687B2Nov 23, 2004
Photo mask for fabricating semiconductor device having dual damascene structure
NEC ELECTRONICS CORP5 citations61