Inventor

LIN CHUN-HSIUNG

TW116 patents

⚠️ This page may combine multiple inventors who share the name “LIN CHUN-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN CHUN-HSIUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Horizontal gate-all-around device having wrapped-around source and drain

Vertical gate all around (VGAA) devices and methods of manufacturing the same

FinFET structures and methods of forming the same

Contacts for highly scaled transistors

Horizontal gate-all-around device having wrapped-around source and drain

Contacts for highly scaled transistors

Gate-all-around structure and methods of forming the same

Contacts for highly scaled transistors

Structure and method for gate-all-around device with extended channel

Methods of fabricating a FinFET device with wrap-around silicide source/drain structure

Dual channel gate all around transistor device and fabrication methods thereof

Semiconductor device and method of manufacturing the same

Contacts for highly scaled transistors

Integrating junction formation of transistors with contact formation

Semiconductor structure with feature spacer and method for manufacturing the same

Method of forming butted contact

Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same

Gate all around structure with additional silicon layer and method for forming the same

FET with wrap-around silicide and fabrication methods thereof

Contacts for highly scaled transistors

Contacts for highly scaled transistors

Transistors having vertical nanostructures

Contacts for highly scaled transistors

FET with wrap-around silicide and fabrication methods thereof

Gate-all-around structure and methods of forming the same

Dual channel gate all around transistor device and fabrication methods thereof

Gate all around structure with additional silicon layer and method for forming the same

Semiconductor structure with nanostructure and method for manufacturing the same

Spacer structure for semiconductor device

Air spacers in transistors and methods forming same

Methods of forming silicide contact in field-effect transistors

FinFET devices and methods of forming the same

Methods of fabricating semiconductor devices having air-gap spacers

Horizontal gate all-around device having wrapped-around source and drain

Methods of fabricating semiconductor devices with gate-all-around structure

Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures

Dual epitaxial growth process for semiconductor device

Method of forming horizontal gate all around structure

Fin semiconductor device having a stepped gate spacer sidewall

Contacts for highly scaled transistors

MACASE IND GROUP GA INC

Computer cabinet cooling system

Computer hard drive heat sink assembly

Removable power pack supply for computer cabinet

LATSHAW ENTERPRISES INC

Ratcheting tool driver and method of assembling an improved ratcheting tool driver

Method of assembling an improved ratcheting tool driver

TAIWAN SEMICONDUCTOR MFG

Method of forming horizontal gate all around structure

Nanowire MOSFET with support structures for source and drain

ASIA OPTICAL CO LTD

Mobile phone having rotatable camera

PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC

Gate-all-around structure and methods of forming the same

ASIA OPTICAL CO INC

Photographable binoculars