Inventor
WANG CHIEN-HSUN
TW47 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHIEN-HSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS9853102B2Dec 26, 2017
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9660082B2May 23, 2017
Integrated circuit transistor structure with high germanium concentration SiGe stressor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9786757B2Oct 10, 2017
Method of forming horizontal gate all around structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9478631B2Oct 25, 2016
Vertical-gate-all-around devices and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11245033B2Feb 8, 2022
Semiconductor devices with core-shell structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9472550B2Oct 18, 2016
Adjusted fin width in integrated circuitry
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11227788B2Jan 18, 2022
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10707114B2Jul 7, 2020
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10693003B2Jun 23, 2020
Integrated circuit transistor structure with high germanium concentration SiGe stressor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10553718B2Feb 4, 2020
Semiconductor devices with core-shell structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10418271B2Sep 17, 2019
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10325994B2Jun 18, 2019
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9954069B2Apr 24, 2018
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9941394B2Apr 10, 2018
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9911812B2Mar 6, 2018
Semiconductor device having a fin shell covering a fin core
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9871101B2Jan 16, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865460B2Jan 9, 2018
Semiconductor device having fin-type channel and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9773868B2Sep 26, 2017
Nanowire MOSFET with support structures for source and drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9735261B2Aug 15, 2017
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9620618B2Apr 11, 2017
Transistor and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9646823B2May 9, 2017
Semiconductor dielectric interface and gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
13 patentsUS8703565B2Apr 22, 2014
Bottom-notched SiGe FinFET formation using condensation
TAIWAN SEMICONDUCTOR MFG207 citations99
US9318447B2Apr 19, 2016
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG6 citations84
US9312186B1Apr 12, 2016
Method of forming horizontal gate all around structure
TAIWAN SEMICONDUCTOR MFG10 citations84
US8806397B2Aug 12, 2014
Method and device for increasing fin device density for unaligned fins
TAIWAN SEMICONDUCTOR MFG5 citations84
US9048301B2Jun 2, 2015
Nanowire MOSFET with support structures for source and drain
TAIWAN SEMICONDUCTOR MFG4 citations73
US9263295B2Feb 16, 2016
Nanowire MOSFET with support structures for source and drain
TAIWAN SEMICONDUCTOR MFG2 citations63
US9184289B2Nov 10, 2015
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG3 citations63
US9276084B2Mar 1, 2016
Transistor and method for forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9214513B2Dec 15, 2015
Fin structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US9166035B2Oct 20, 2015
Delta doping layer in MOSFET source/drain region
TAIWAN SEMICONDUCTOR MFG1 citations52
US9147766B2Sep 29, 2015
Semiconductor device having fin-type channel and method for forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US9026959B2May 5, 2015
Method and device for increasing fin device density for unaligned fins
TAIWAN SEMICONDUCTOR MFG0 citations52
US9390913B2Jul 12, 2016
Semiconductor dielectric interface and gate stack
TAIWAN SEMICONDUCTOR MFG0 citations38
WANG CHIEN-HSUN
5 patentsUS8525267B2Sep 3, 2013
Device and method for forming Fins in integrated circuitry
WANG CHIEN-HSUN22 citations92
US8486769B2Jul 16, 2013
Method for forming metrology structures from fins in integrated circuitry
WANG CHIEN-HSUN23 citations92
US8633076B2Jan 21, 2014
Method for adjusting fin width in integrated circuitry
WANG CHIEN-HSUN14 citations84
US8769446B2Jul 1, 2014
Method and device for increasing fin device density for unaligned fins
WANG CHIEN-HSUN3 citations62
US9646958B2May 9, 2017
Integrated circuits including dummy structures and methods of forming the same
WANG CHIEN-HSUN0 citations34