Inventor
YIN KEVIN Q
US19 patents
Patents
19 patentsUS6586307B1Jul 1, 2003
Method for controlling an emitter window opening in an HBT and related structure
NEWPORT FAB LLC14 citations92
US6992338B1Jan 31, 2006
CMOS transistor spacers formed in a BiCMOS process
NEWPORT FAB LLC11 citations84
US7772673B1Aug 10, 2010
Deep trench isolation and method for forming same
NEWPORT FAB LLC12 citations83
US7015115B1Mar 21, 2006
Method for forming deep trench isolation and related structure
NEWPORT FAB LLC18 citations83
US6830967B1Dec 14, 2004
Method for forming CMOS transistor spacers in a BiCMOS process
NEWPORT FAB LLC14 citations83
US6797580B1Sep 28, 2004
Method for fabricating a bipolar transistor in a BiCMOS process and related structure
NEWPORT FAB LLC13 citations82
US6995449B1Feb 7, 2006
Deep trench isolation region with reduced-size cavities in overlying field oxide
NEWPORT FAB LLC10 citations73
US6770541B1Aug 3, 2004
Method for hard mask removal for deep trench isolation and related structure
NEWPORT FAB LLC7 citations73
US7291536B1Nov 6, 2007
Fabricating a self-aligned bipolar transistor having increased manufacturability
NEWPORT FAB LLC7 citations72
US6924196B1Aug 2, 2005
Anti-reflective coating and process using an anti-reflective coating
NEWPORT FAB LLC7 citations72
US6894328B2May 17, 2005
Self-aligned bipolar transistor having recessed spacers and method for fabricating same
NEWPORT FAB LLC3 citations62
US6765243B1Jul 20, 2004
HBT having a controlled emitter window opening
NEWPORT FAB LLC2 citations62
US7064415B1Jun 20, 2006
Self-aligned bipolar transistor having increased manufacturability
NEWPORT FAB LLC2 citations61
US6867440B1Mar 15, 2005
Self-aligned bipolar transistor without spacers and method for fabricating same
NEWPORT FAB LLC2 citations61
US7994611B1Aug 9, 2011
Bipolar transistor fabricated in a biCMOS process
NEWPORT FAB LLC0 citations51
US7282418B1Oct 16, 2007
Method for fabricating a self-aligned bipolar transistor without spacers
NEWPORT FAB LLC1 citations51
US7033898B1Apr 25, 2006
Method for fabricating a self-aligned bipolar transistor having recessed spacers
NEWPORT FAB LLC0 citations51
US6979626B2Dec 27, 2005
Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure
NEWPORT FAB LLC0 citations51
US6764913B1Jul 20, 2004
Method for controlling an emitter window opening in an HBT and related structure
NEWPORT FAB LLC0 citations51