Inventor
KOESTER STEVEN J
US63 patents
⚠️ This page may combine multiple inventors who share the name “KOESTER STEVEN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
19 patentsUS7652332B2Jan 26, 2010
Extremely-thin silicon-on-insulator transistor with raised source/drain
IBM50 citations98
US8018007B2Sep 13, 2011
Selective floating body SRAM cell
IBM34 citations96
US6805962B2Oct 19, 2004
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
IBM52 citations96
US7138697B2Nov 21, 2006
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
IBM54 citations94
US7897428B2Mar 1, 2011
Three-dimensional integrated circuits and techniques for fabrication thereof
IBM20 citations93
US7871869B2Jan 18, 2011
Extremely-thin silicon-on-insulator transistor with raised source/drain
IBM24 citations92
US7510904B2Mar 31, 2009
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
IBM22 citations92
US6743651B2Jun 1, 2004
Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen
IBM30 citations92
US6690072B2Feb 10, 2004
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe device
IBM16 citations92
US8716810B2May 6, 2014
Selective floating body SRAM cell
IBM11 citations84
US7964896B2Jun 21, 2011
Buried channel MOSFET using III-V compound semiconductors and high k gate dielectrics
IBM13 citations84
US7955887B2Jun 7, 2011
Techniques for three-dimensional circuit integration
IBM12 citations84
US7521376B2Apr 21, 2009
Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment
IBM10 citations84
US7393735B2Jul 1, 2008
Structure for and method of fabricating a high-mobility field-effect transistor
IBM10 citations84
US6972250B2Dec 6, 2005
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device
IBM16 citations84
US8378429B2Feb 19, 2013
Selective floating body SRAM cell
IBM4 citations74
US6949761B2Sep 27, 2005
Structure for and method of fabricating a high-mobility field-effect transistor
IBM7 citations74
US7074686B2Jul 11, 2006
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
IBM10 citations71
US8969992B2Mar 3, 2015
Autonomous integrated circuits
IBM2 citations63
UNIV MINNESOTA
9 patentsUS10191005B2Jan 29, 2019
Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
UNIV MINNESOTA15 citations94
US11079371B2Aug 3, 2021
Chemical sensors with non-covalent surface modification of graphene
UNIV MINNESOTA15 citations84
US11293914B2Apr 5, 2022
Chemical sensors with non-covalent, electrostatic surface modification of graphene
UNIV MINNESOTA9 citations83
US10712302B2Jul 14, 2020
Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
UNIV MINNESOTA3 citations73
US11923419B2Mar 5, 2024
Non-covalent modification of graphene-based chemical sensors
UNIV MINNESOTA2 citations71
US11867596B2Jan 9, 2024
Chemical sensors with non-covalent, electrostatic surface modification of graphene
UNIV MINNESOTA2 citations71
US11908901B1Feb 20, 2024
Graphene varactor including ferroelectric material
UNIV MINNESOTA4 citations66
US11561192B2Jan 24, 2023
Ultra-compact, passive, wireless sensor using quantum capacitance effect in graphene
UNIV MINNESOTA0 citations63
US10948447B2Mar 16, 2021
Ultra-compact, passive, wireless sensor using quantum capacitance effect in graphene
UNIV MINNESOTA0 citations63
FAROOQ MUKTA G
8 patentsUS8158515B2Apr 17, 2012
Method of making 3D integrated circuits
FAROOQ MUKTA G281 citations99
US8129256B2Mar 6, 2012
3D integrated circuit device fabrication with precisely controllable substrate removal
FAROOQ MUKTA G254 citations99
US8674515B2Mar 18, 2014
3D integrated circuits structure
FAROOQ MUKTA G11 citations84
US8492869B2Jul 23, 2013
3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer
FAROOQ MUKTA G5 citations84
US8298914B2Oct 30, 2012
3D integrated circuit device fabrication using interface wafer as permanent carrier
FAROOQ MUKTA G7 citations84
US8664081B2Mar 4, 2014
Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier
FAROOQ MUKTA G2 citations63
US8629553B2Jan 14, 2014
3D integrated circuit device fabrication with precisely controllable substrate removal
FAROOQ MUKTA G1 citations63
US8399336B2Mar 19, 2013
Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer
FAROOQ MUKTA G2 citations63
HANON SYSTEMS
3 patentsKOESTER STEVEN J
2 patentsLAUER ISAAC
2 patentsASSEFA SOLOMON
2 patentsCABRAL JR CYRIL
1 patentDE SOUZA JOEL P
1 patentBANGSARUNTIP SARUNYA
1 patentBOSTON SCIENT SCIMED INC
1 patentCAI JIN
1 patentShowing the top 50 of 63 patents by PatentIndex Score.