Inventor
YANG JIA-WEI
TW11 patents
⚠️ This page may combine multiple inventors who share the name “YANG JIA-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
6 patentsUS6972471B2Dec 6, 2005
Deep trench isolation structure of a high-voltage device and method for forming thereof
VANGUARD INT SEMICONDUCT CORP12 citations83
US7242070B2Jul 10, 2007
Deep trench isolation structure of a high-voltage device and method for forming thereof
VANGUARD INT SEMICONDUCT CORP9 citations73
US7041572B2May 9, 2006
Fabrication method for a deep trench isolation structure of a high-voltage device
VANGUARD INT SEMICONDUCT CORP9 citations73
US6680231B1Jan 20, 2004
High-voltage device process compatible with low-voltage device process
VANGUARD INT SEMICONDUCT CORP6 citations62
US7476934B2Jan 13, 2009
Structure for an LDMOS transistor and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP4 citations59
US7074658B2Jul 11, 2006
Structure for an LDMOS transistor and fabrication method for thereof
VANGUARD INT SEMICONDUCT CORP2 citations59