Inventor
AL-BAYATI AMIR
US50 patents
⚠️ This page may combine multiple inventors who share the name “AL-BAYATI AMIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
38 patentsUS7695590B2Apr 13, 2010
Chemical vapor deposition plasma reactor having plural ion shower grids
APPLIED MATERIALS INC195 citations99
US7429532B2Sep 30, 2008
Semiconductor substrate process using an optically writable carbon-containing mask
APPLIED MATERIALS INC539 citations99
US7422775B2Sep 9, 2008
Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
APPLIED MATERIALS INC535 citations99
US7393765B2Jul 1, 2008
Low temperature CVD process with selected stress of the CVD layer on CMOS devices
APPLIED MATERIALS INC562 citations99
US7335611B2Feb 26, 2008
Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
APPLIED MATERIALS INC535 citations99
US7323401B2Jan 29, 2008
Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
APPLIED MATERIALS INC580 citations99
US7312162B2Dec 25, 2007
Low temperature plasma deposition process for carbon layer deposition
APPLIED MATERIALS INC544 citations99
US7312148B2Dec 25, 2007
Copper barrier reflow process employing high speed optical annealing
APPLIED MATERIALS INC537 citations99
US7291360B2Nov 6, 2007
Chemical vapor deposition plasma process using plural ion shower grids
APPLIED MATERIALS INC186 citations99
US7244474B2Jul 17, 2007
Chemical vapor deposition plasma process using an ion shower grid
APPLIED MATERIALS INC195 citations99
US7109098B1Sep 19, 2006
Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
APPLIED MATERIALS INC551 citations99
US7767561B2Aug 3, 2010
Plasma immersion ion implantation reactor having an ion shower grid
APPLIED MATERIALS INC68 citations98
US7666464B2Feb 23, 2010
RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
APPLIED MATERIALS INC63 citations98
US7291545B2Nov 6, 2007
Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC73 citations98
US7183177B2Feb 27, 2007
Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
APPLIED MATERIALS INC119 citations98
US7137354B2Nov 21, 2006
Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC63 citations98
US7094670B2Aug 22, 2006
Plasma immersion ion implantation process
APPLIED MATERIALS INC79 citations98
US7037813B2May 2, 2006
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC76 citations98
US6893907B2May 17, 2005
Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
APPLIED MATERIALS INC127 citations97
US7292428B2Nov 6, 2007
Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
APPLIED MATERIALS INC57 citations96
US7223676B2May 29, 2007
Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
APPLIED MATERIALS INC49 citations96
US7566655B2Jul 28, 2009
Integration process for fabricating stressed transistor structure
APPLIED MATERIALS INC20 citations93
US7465478B2Dec 16, 2008
Plasma immersion ion implantation process
APPLIED MATERIALS INC39 citations93
US7294563B2Nov 13, 2007
Semiconductor on insulator vertical transistor fabrication and doping process
APPLIED MATERIALS INC43 citations93
US7288491B2Oct 30, 2007
Plasma immersion ion implantation process
APPLIED MATERIALS INC41 citations93
US7700465B2Apr 20, 2010
Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC25 citations92
US7320734B2Jan 22, 2008
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC24 citations92
US7303982B2Dec 4, 2007
Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC33 citations92
US7225047B2May 29, 2007
Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
APPLIED MATERIALS INC46 citations92
US7166524B2Jan 23, 2007
Method for ion implanting insulator material to reduce dielectric constant
APPLIED MATERIALS INC46 citations92
US7879683B2Feb 1, 2011
Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
APPLIED MATERIALS INC35 citations91
US6559454B1May 6, 2003
Ion beam generation apparatus
APPLIED MATERIALS INC66 citations91
US6897131B2May 24, 2005
Advances in spike anneal processes for ultra shallow junctions
APPLIED MATERIALS INC45 citations90
US7642180B2Jan 5, 2010
Semiconductor on insulator vertical transistor fabrication and doping process
APPLIED MATERIALS INC12 citations84
US7479456B2Jan 20, 2009
Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
APPLIED MATERIALS INC18 citations82
US7816205B2Oct 19, 2010
Method of forming non-volatile memory having charge trap layer with compositional gradient
APPLIED MATERIALS INC5 citations74
US7428915B2Sep 30, 2008
O-ringless tandem throttle valve for a plasma reactor chamber
APPLIED MATERIALS INC8 citations74
US7777197B2Aug 17, 2010
Vacuum reaction chamber with x-lamp heater
APPLIED MATERIALS INC7 citations72