Inventor

GALLO BIAGIO

US33 patents

⚠️ This page may combine multiple inventors who share the name “GALLO BIAGIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GALLO BIAGIO

APPLIED MATERIALS INC

Semiconductor substrate process using an optically writable carbon-containing mask

Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing

Low temperature CVD process with selected stress of the CVD layer on CMOS devices

Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer

Semiconductor substrate process using a low temperature deposited carbon-containing hard mask

Low temperature plasma deposition process for carbon layer deposition

Copper barrier reflow process employing high speed optical annealing

Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing

RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor

Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage

Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement

Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage

Plasma immersion ion implantation process

Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

Fabrication of silicon-on-insulator structure using plasma immersion ion implantation

Electrostatic chuck with smart lift-pin mechanism for a plasma reactor

Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer

Plasma immersion ion implantation process

Semiconductor on insulator vertical transistor fabrication and doping process

Plasma immersion ion implantation process

Method of determining dose uniformity of a scanning ion implanter

Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage

Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage

Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage

Method for ion implanting insulator material to reduce dielectric constant

Semiconductor on insulator vertical transistor fabrication and doping process

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

O-ringless tandem throttle valve for a plasma reactor chamber

Method of obtaining a performance parameter for an ion implanter and an ion implanter employing the method

Plasma immersed ion implantation process

Removal of surface dopants from a substrate

PORSHNEV PETER I

Plasma immersion ion implantation reactor with extended cathode process ring

LI SHIJIAN

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces