P

Inventor

SHIN SANG-MIN

KR39 patents
⚠️ This page may combine multiple inventors who share the name “SHIN SANG-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US7598095B2Oct 6, 2009

Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD25 citations92
US7148530B2Dec 12, 2006

Ferroelectric capacitor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD23 citations89
US7910967B2Mar 22, 2011

Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7372757B2May 13, 2008

Magnetic memory device with moving magnetic domain walls

SAMSUNG ELECTRONICS CO LTD9 citations84
US7361554B2Apr 22, 2008

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

SAMSUNG ELECTRONICS CO LTD15 citations84
US7297997B2Nov 20, 2007

Semiconductor memory device with dual storage node and fabricating and operating methods thereof

SAMSUNG ELECTRONICS CO LTD14 citations84
US7256447B2Aug 14, 2007

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

SAMSUNG ELECTRONICS CO LTD9 citations74
US10466856B2Nov 5, 2019

Electronic device having two displays and a method for executing a different application on each display of the electronic device based on simultaneous inputs into a plurality of application icons

SAMSUNG ELECTRONICS CO LTD3 citations73
US9305523B2Apr 5, 2016

Method of editing contents and an electronic device therefor

SAMSUNG ELECTRONICS CO LTD2 citations63
US7732855B2Jun 8, 2010

Semiconductor memory device including recessed control gate electrode

SAMSUNG ELECTRONICS CO LTD4 citations63
USRE50215ENov 19, 2024

Protocol processing method and apparatus for multi-SIM terminal

SAMSUNG ELECTRONICS CO LTD0 citations62
US11257979B2Feb 22, 2022

Display apparatus and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD0 citations62
US10346033B2Jul 9, 2019

Electronic device for processing multi-touch input and operating method thereof

SAMSUNG ELECTRONICS CO LTD1 citations62
US7927552B2Apr 19, 2011

Method of mixing fluids and mixing apparatus adopting the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7535049B2May 19, 2009

Multi bits flash memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7338808B2Mar 4, 2008

Method and apparatus for determining zeta potential using alternating current electric field and T channel

SAMSUNG ELECTRONICS CO LTD2 citations62
US11423826B2Aug 23, 2022

Display apparatus and manufacturing method for the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10062381B2Aug 28, 2018

Method and electronic device for providing content

SAMSUNG ELECTRONICS CO LTD0 citations52
US9823830B2Nov 21, 2017

Method for managing a list and electronic device thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US7979073B2Jul 12, 2011

Apparatus and method for solving congestion in wideband code division multiple access system

SAMSUNG ELECTRONICS CO LTD0 citations52
US7795159B2Sep 14, 2010

Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7745233B2Jun 29, 2010

Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7675786B2Mar 9, 2010

Method of operating a semiconductor memory device having a recessed control gate electrode

SAMSUNG ELECTRONICS CO LTD0 citations52
US7613027B2Nov 3, 2009

Semiconductor memory device with dual storage node and fabricating and operating methods thereof

SAMSUNG ELECTRONICS CO LTD1 citations52
US7542346B2Jun 2, 2009

Memory device and method for operating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7459736B2Dec 2, 2008

Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7250649B2Jul 31, 2007

Capacitor of a memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US10969779B2Apr 6, 2021

Electronic device for controlling vehicle, and operating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations49
US11318984B2May 3, 2022

Electronic device for assisting driving of vehicle and method therefor

SAMSUNG ELECTRONICS CO LTD0 citations43

HYUNDAI MOTOR CO LTD

3 patents

SHIN SANG MIN

3 patents

LIQUAVISTA BV

1 patent

SHIN SANG-MIN

1 patent

AMAZON TECH INC

1 patent

CHA JAE YOUNG

1 patent