Inventor

RING ZOLTAN

US24 patents

⚠️ This page may combine multiple inventors who share the name “RING ZOLTAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RING ZOLTAN

CREE INC

Nitride-based transistors with a protective layer and a low-damage recess

Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof

Layered semiconductor devices with conductive vias

Method of forming vias in silicon carbide and resulting devices and circuits

Method of forming vias in silicon carbide and resulting devices and circuits

Method of forming vias in silicon carbide and resulting devices and circuits

Method of forming vias in silicon carbide and resulting devices and circuits

Method of forming vias in silicon carbide and resulting devices and circuits

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Encapsulation of advanced devices using novel PECVD and ALD schemes

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

PECVD protective layers for semiconductor devices

Stress mitigation for thin and thick films used in semiconductor circuitry

Hydrogen mitigation schemes in the passivation of advanced devices

Method of forming vias in silicon carbide and resulting devices and circuits

Devices including ultra-short gates and methods of forming same

Using stress reduction barrier sub-layers in a semiconductor die

RING ZOLTAN

Method of forming vias in silicon carbide and resulting devices and circuits

Method of forming vias in silicon carbide and resulting devices and circuits

MIECZKOWSKI VAN

Multilayer diffusion barriers for wide bandgap Schottky barrier devices

Contact pad

HAGLEITNER HELMUT

Methods of forming contact structures including alternating metal and silicon layers and related devices

SHEPPARD SCOTT T

Nitride-based transistors with a protective layer and a low-damage recess