Inventor
MAKABE ISAO
JP18 patents
⚠️ This page may combine multiple inventors who share the name “MAKABE ISAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
7 patentsUS9123534B2Sep 1, 2015
Semiconductor device and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES4 citations71
US11935744B2Mar 19, 2024
Method for manufacturing nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10505013B2Dec 10, 2019
Process of forming epitaxial substrate having N-polar gallium nitride
SUMITOMO ELECTRIC INDUSTRIES1 citations61
US10038086B2Jul 31, 2018
Process for forming a high electron mobility transistor
SUMITOMO ELECTRIC INDUSTRIES1 citations50
US9355843B2May 31, 2016
Semiconductor device and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US10622470B2Apr 14, 2020
Process of forming nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations40
US9029873B2May 12, 2015
Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device
SUMITOMO ELECTRIC INDUSTRIES0 citations40
MAKABE ISAO
4 patentsUS8648389B2Feb 11, 2014
Semiconductor device with spacer layer between carrier traveling layer and carrier supplying layer
MAKABE ISAO7 citations82
US8247796B2Aug 21, 2012
Semiconductor device
MAKABE ISAO5 citations61
US8232557B2Jul 31, 2012
Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same
MAKABE ISAO5 citations61
US8546813B2Oct 1, 2013
Semiconductor substrate and semiconductor device
MAKABE ISAO4 citations60