Inventor

SONG YOON-JONG

KR40 patents

⚠️ This page may combine multiple inventors who share the name “SONG YOON-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONG YOON-JONG

SAMSUNG ELECTRONICS CO LTD

Ferroelectric memory device and method of forming the same

Ferroelectric memory device using via etch-stop layer and method for manufacturing the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Ferroelectric integrated circuit devices having an oxygen penetration path

Phase-change memory device

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase change memory device

Ferroelectric memory device using via etch-stop layer and method for manufacturing the same

Phase change memory devices and methods of forming the same

Phase change memory devices having dual lower electrodes

Magnetoresistive random access memory device and method of manufacturing the same

Phase-changeable memory devices having reduced susceptibility to thermal interference

PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same

Semiconductor device having multi-layer oxygen barrier pattern

Semiconductor device including variable resistance memory device

Semiconductor device including variable resistance memory device

Methods of manufacturing a phase change memory device including a heat sink

Ferroelectric integrated circuit devices having an oxygen penetration path

Ferroelectric memory devices with improved ferroelectric properties and associated methods for fabricating such memory devices

Ferroelectric memory devices having an expanded plate electrode

Semiconductor device having ferroelectric material capacitor and method of making the same

Ferroelectric memory device and method of forming the same

Methods for forming electronic devices including capacitor structures

Magnetoresistive random access memory device and method of manufacturing the same

PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same

Phase change memory and method of fabricating the same

Phase change memory device

Memory device and memory system having multiple error correction functions, and operating method thereof

Methods for fabricating ferroelectric memory devices with improved ferroelectric properties

MTJ structures including magnetism induction pattern and magnetoresistive random access memory devices including the same

Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same

SONG YOON-JONG

Phase change memory

Phase change memory devices having dual lower electrodes and methods of fabricating the same

SAMSUNG ELECTRONICS COL LTD

Phase change memory device and method for forming the same

SUH KI-SEOK

Magnetoresistive random access memory device and method of manufacturing the same

BAK JUNG HOON

Magnetoresistive random access memory device having magnetic tunnel junction and method of manufacturing the same

SIM KYU-RIE

Semiconductor device including uniform contact plugs and a method of manufacturing the same

SEOUL NAT UNIV R&DB FOUNDATION

Core magnetization reversal method of skyrmion and data storage device using the method

SUH KI SEOK

Magnetoresistive random access memory device and method of manufacturing the same

JEONG DAE-EUN

Magnetic memory device and method for forming the same