Inventor

LEE SEUNG-CHANG

US34 patents

⚠️ This page may combine multiple inventors who share the name “LEE SEUNG-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE SEUNG-CHANG

STC UNM

Epitaxial growth of in-plane nanowires and nanowire devices

Method of making a heteroepitaxial layer on a seed area

Cubic phase, nitrogen-based compound semiconductor films

Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure

Epitaxial growth of in-plane nanowires and nanowire devices

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

Nanowire bending for planar device process on (001) Si substrates

Selective nanoscale growth of lattice mismatched materials

LEE SEUNG-CHANG

Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si &lt;001&gt; substrate

Cubic phase, nitrogen-based compound semiconductor films

Gate-all-around metal-oxide-semiconductor transistors with gate oxides

Cubic phase, nitrogen-based compound semiconductor films

Gate-all-around metal-oxide-semiconductor transistors with gate oxides

Selective nanoscale growth of lattice mismatched materials

Plasmonic detectors

Selective nanoscale growth of lattice mismatched materials

Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth

UNM RAINFOREST INNOVATIONS

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Method of making heteroepitaxial structures and device formed by the method

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

Nanowire bending for planar device process on (001) Si substrates

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Method of making heteroepitaxial structures and device formed by the method

Method of forming a seed area and growing a heteroepitaxial layer on the seed area

Device with heteroepitaxial structure made using a growth mask

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

BRUECK STEVEN R J

Device with heteroepitaxial structure made using a growth mask

Surface plasma wave coupled detectors

Surface plasma wave coupled detectors

KOREA ELECTRONICS TELECOMM

Process for formation for hetero junction structured film utilizing V grooves

LEE SEUNG CHANG

Epitaxial growth of in-plane nanowires and nanowire devices

Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate