Inventor
YANG HUAI-TEI
TW78 patents
⚠️ This page may combine multiple inventors who share the name “YANG HUAI-TEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
45 patentsUS10522359B2Dec 31, 2019
FinFET device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10535523B1Jan 14, 2020
Formation and in-situ etching processes for metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US10510889B2Dec 17, 2019
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US10680106B2Jun 9, 2020
Method of forming source/drain epitaxial stacks
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US10535736B2Jan 14, 2020
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9899273B1Feb 20, 2018
Semiconductor structure with dopants diffuse protection and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9722081B1Aug 1, 2017
FinFET device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9543387B2Jan 10, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US11569383B2Jan 31, 2023
Method of forming source/drain epitaxial stacks
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11233123B2Jan 25, 2022
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11222805B2Jan 11, 2022
Etching apparatus and methods of cleaning thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11195931B2Dec 7, 2021
Gate structure, semiconductor device and the method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10867799B2Dec 15, 2020
FinFET device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10840358B2Nov 17, 2020
Method for manufacturing semiconductor structure with source/drain structure having modified shape
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10468530B2Nov 5, 2019
Semiconductor structure with source/drain multi-layer structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10347720B2Jul 9, 2019
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9931726B2Apr 3, 2018
Wafer edge trimming tool using abrasive tape
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545363B2Jan 3, 2023
Formation and in-situ etching processes for metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9564513B2Feb 7, 2017
Epitaxy in semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12527041B2Jan 13, 2026
Method of forming source/drain epitaxial stacks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12080761B2Sep 3, 2024
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12021142B2Jun 25, 2024
Method of forming source/drain epitaxial stacks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11990550B2May 21, 2024
Semiconductor structure with source/drain multi-layer structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11973127B2Apr 30, 2024
Semiconductor structure with source/drain structure having modified shape
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854811B2Dec 26, 2023
FinFET device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11527655B2Dec 13, 2022
Semiconductor structure with source/drain multi-layer structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11227951B2Jan 18, 2022
Method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11004688B2May 11, 2021
FinFET device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10937910B2Mar 2, 2021
Semiconductor structure with source/drain multi-layer structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10923355B2Feb 16, 2021
Methods and systems for dopant activation using microwave radiation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12490508B2Dec 2, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12394624B2Aug 19, 2025
Silicon intermixing layer for blocking diffusion
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170202B2Dec 17, 2024
Formation and in-situ etching processes for metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080582B2Sep 3, 2024
Etching apparatus and methods of cleaning thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12021143B2Jun 25, 2024
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015055B2Jun 18, 2024
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817499B2Nov 14, 2023
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742386B2Aug 29, 2023
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11587791B2Feb 21, 2023
Silicon intermixing layer for blocking diffusion
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11450741B2Sep 20, 2022
Doping for semiconductor device with conductive feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11404574B2Aug 2, 2022
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398482B2Jul 26, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11219115B2Jan 4, 2022
EUV collector contamination prevention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971602B2Apr 6, 2021
High-k metal gate process and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930781B2Feb 23, 2021
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
2 patentsLAI YI-JEN
1 patentHSU CHUN-YUAN
1 patentPARABELLUM STRATEGIC OPPORTUNITIES FUND LLC
1 patentShowing the top 50 of 78 patents by PatentIndex Score.