Inventor
YU KUO-FENG
TW103 patents
⚠️ This page may combine multiple inventors who share the name “YU KUO-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
40 patentsUS10164048B1Dec 25, 2018
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US10686074B2Jun 16, 2020
Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10651287B2May 12, 2020
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10468500B1Nov 5, 2019
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9577070B2Feb 21, 2017
Gate spacers and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12255104B2Mar 18, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11972982B2Apr 30, 2024
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11769817B2Sep 26, 2023
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404322B2Aug 2, 2022
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11276766B2Mar 15, 2022
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11195931B2Dec 7, 2021
Gate structure, semiconductor device and the method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991800B2Apr 27, 2021
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868129B2Dec 15, 2020
Gate spacer and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10741662B2Aug 11, 2020
Gate spacer and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522641B2Dec 31, 2019
Gate spacer and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10396156B2Aug 27, 2019
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10276715B2Apr 30, 2019
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9711620B2Jul 18, 2017
Method for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11894276B2Feb 6, 2024
Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12142657B2Nov 12, 2024
Gate structure for multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12469710B2Nov 11, 2025
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12142663B2Nov 12, 2024
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12132107B2Oct 29, 2024
Semiconductor structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119390B2Oct 15, 2024
Gate spacer structures and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119389B2Oct 15, 2024
Semiconductor device with reduced trap defect and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12068371B2Aug 20, 2024
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855208B2Dec 26, 2023
Method for forming fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855176B2Dec 26, 2023
FinFET structure with doped region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11764284B2Sep 19, 2023
Semiconductor device with reduced trap defect and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11355635B2Jun 7, 2022
Semiconductor structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11329139B2May 10, 2022
Semiconductor device with reduced trap defect and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11233140B2Jan 25, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10923355B2Feb 16, 2021
Methods and systems for dopant activation using microwave radiation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10431670B2Oct 1, 2019
Source and drain formation technique for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12550374B2Feb 10, 2026
Semiconductor device and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12463040B2Nov 4, 2025
Methods for doping high-K metal gates for tuning threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324216B2Jun 3, 2025
Metal gates for multi-gate devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317574B2May 27, 2025
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266575B2Apr 1, 2025
Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12171091B2Dec 17, 2024
Multi-layer high-k gate dielectric structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
6 patentsUS9337316B2May 10, 2016
Method for FinFET device
TAIWAN SEMICONDUCTOR MFG16 citations93
US8350327B2Jan 8, 2013
High voltage device with reduced leakage
TAIWAN SEMICONDUCTOR MFG24 citations89
US7518192B2Apr 14, 2009
Asymmetrical layout structure for ESD protection
TAIWAN SEMICONDUCTOR MFG8 citations84
US7420250B2Sep 2, 2008
Electrostatic discharge protection device having light doped regions
TAIWAN SEMICONDUCTOR MFG14 citations84
US9142404B2Sep 22, 2015
Systems and methods for annealing semiconductor device structures using microwave radiation
TAIWAN SEMICONDUCTOR MFG5 citations73
US9111768B2Aug 18, 2015
Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
TAIWAN SEMICONDUCTOR MFG5 citations73
CHUNG SHU-WEI
1 patentLU CHIA-YU
1 patentHORNG JAW-JUINN
1 patentCHEN JIAN-HAO
1 patentShowing the top 50 of 103 patents by PatentIndex Score.