P

Inventor

YU KUO-FENG

TW103 patents
⚠️ This page may combine multiple inventors who share the name “YU KUO-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

40 patents
US10164048B1Dec 25, 2018

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US10686074B2Jun 16, 2020

Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10651287B2May 12, 2020

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10468500B1Nov 5, 2019

FinFET fabrication methods

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9577070B2Feb 21, 2017

Gate spacers and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12255104B2Mar 18, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11972982B2Apr 30, 2024

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11769817B2Sep 26, 2023

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404322B2Aug 2, 2022

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11276766B2Mar 15, 2022

FinFET fabrication methods

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11195931B2Dec 7, 2021

Gate structure, semiconductor device and the method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991800B2Apr 27, 2021

Method for FinFET LDD doping

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868129B2Dec 15, 2020

Gate spacer and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10741662B2Aug 11, 2020

Gate spacer and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522641B2Dec 31, 2019

Gate spacer and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10396156B2Aug 27, 2019

Method for FinFET LDD doping

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10276715B2Apr 30, 2019

Fin field effect transistor and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9711620B2Jul 18, 2017

Method for FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11894276B2Feb 6, 2024

Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12142657B2Nov 12, 2024

Gate structure for multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12469710B2Nov 11, 2025

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12142663B2Nov 12, 2024

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12132107B2Oct 29, 2024

Semiconductor structure and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119390B2Oct 15, 2024

Gate spacer structures and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119389B2Oct 15, 2024

Semiconductor device with reduced trap defect and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12068371B2Aug 20, 2024

Method for FinFET LDD doping

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855208B2Dec 26, 2023

Method for forming fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855176B2Dec 26, 2023

FinFET structure with doped region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11764284B2Sep 19, 2023

Semiconductor device with reduced trap defect and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11355635B2Jun 7, 2022

Semiconductor structure and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11329139B2May 10, 2022

Semiconductor device with reduced trap defect and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11233140B2Jan 25, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10923355B2Feb 16, 2021

Methods and systems for dopant activation using microwave radiation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10431670B2Oct 1, 2019

Source and drain formation technique for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12550374B2Feb 10, 2026

Semiconductor device and formation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12463040B2Nov 4, 2025

Methods for doping high-K metal gates for tuning threshold voltages

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324216B2Jun 3, 2025

Metal gates for multi-gate devices and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317574B2May 27, 2025

Device providing multiple threshold voltages and methods of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266575B2Apr 1, 2025

Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12171091B2Dec 17, 2024

Multi-layer high-k gate dielectric structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

6 patents

CHUNG SHU-WEI

1 patent

LU CHIA-YU

1 patent

HORNG JAW-JUINN

1 patent

CHEN JIAN-HAO

1 patent

Showing the top 50 of 103 patents by PatentIndex Score.