Inventor

PARK CHANDO

US60 patents

⚠️ This page may combine multiple inventors who share the name “PARK CHANDO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK CHANDO

QUALCOMM INC

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array

High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array

One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations

Self-compensation of stray field of perpendicular magnetic elements

System and method to generate a random number

Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch

Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data

Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory

Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory

Dynamic memory protection

Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)

Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices

Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device

Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)

Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction

Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer

Physically unclonable function based on comparison of MTJ resistances

Message-based key generation using physical unclonable function (PUF)

Magnetic tunnel junction (MTJ) device array

Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance

Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements

Magnetic tunnel junction (MTJ) device array

Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)

Etch-resistant protective coating for a magnetic tunnel junction device

Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory

Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication

APPLIED MATERIALS INC

Spin orbit torque MRAM and manufacture thereof

Spin-orbit torque MRAM structure and manufacture thereof

Magnetic memory devices and methods of formation

Methods for forming structures for MRAM applications

Spin-orbit torque MRAM structure and manufacture thereof

Top buffer layer for magnetic tunnel junction application

Methods for etching a structure for MRAM applications

Methods for forming structures for MRAM applications

Top buffer layer for magnetic tunnel junction application

WESTERN DIGITAL FREMONT LLC

Method for providing a magnetic recording transducer

Magnetic etch-stop layer for magnetoresistive read heads

Method and system for providing a magnetic transducer having improved shield-to-shield spacing

HGST Netherlands BV

Capping materials for magnetic read head sensor

Magnetic tunnel junction with barrier cooling for magnetic read head

Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field

PAKALA MAHENDRA

Magnetic etch-stop layer for magnetoresistive read heads

Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface

PARK CHANDO

Method and system for providing a magnetic transducer having improved shield-to-shield spacing

Method and system for providing an improved sensor stack for a recording head

LENG QUNWEN

Method and system for providing a read sensor having a low magnetostriction free layer

GAO ZHENG

Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same