Inventor
Kan Jimmy Jianan
US11 patents
Patents
11 patentsUS10381060B2Aug 13, 2019
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
QUALCOMM INC25 citations94
US9824735B1Nov 21, 2017
System and method to generate a random number
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US9704919B1Jul 11, 2017
High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells
QUALCOMM INC30 citations94
US10224368B2Mar 5, 2019
Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path
QUALCOMM INC9 citations84
US10134808B2Nov 20, 2018
Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)
QUALCOMM INC8 citations84
US10096649B2Oct 9, 2018
Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices
QUALCOMM INC7 citations84
US9590010B1Mar 7, 2017
Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer
QUALCOMM INC18 citations84
US9870811B2Jan 16, 2018
Physically unclonable function based on comparison of MTJ resistances
QUALCOMM INC10 citations83
US10547460B2Jan 28, 2020
Message-based key generation using physical unclonable function (PUF)
QUALCOMM INC4 citations73
US10431734B2Oct 1, 2019
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
QUALCOMM INC1 citations62
US10833254B2Nov 10, 2020
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
QUALCOMM INC0 citations52