Inventor

SHEN YANPING

US28 patents

⚠️ This page may combine multiple inventors who share the name “SHEN YANPING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHEN YANPING

GLOBALFOUNDRIES US INC

Forming two portion spacer after metal gate and contact formation, and related IC structure

Memory device comprising a top via electrode and methods of making such a memory device

Top electrode for a memory device and methods of making such a memory device

Self-aligned contact

Field effect transistor with asymmetric gate structure and method

Active and dummy fin structures

Integrated circuit structure with niobium-based silicide layer and methods to form same

Middle of line gate structures

Semiconductor devices with uniform gate height and method of forming same

Memory device comprising a top via electrode and methods of making such a memory device

Via structures for use in semiconductor devices

Semiconductor devices having late-formed isolation structures

Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material

Memory device and methods of making such a memory device

Semiconductor structures in a wide gate pitch region of semiconductor devices

GLOBALFOUNDRIES INC

Method of forming vertical field effect transistors with different gate lengths and a resulting structure

Methods of forming EPI semiconductor material on the source/drain regions of a FinFET device

Methods to thin down RMG sidewall layers for scalability of gate-last planar CMOS and FinFET technology

Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method

FinFETs having gates parallel to fins

Semiconductor recess to epitaxial regions and related integrated circuit structure

FinFET device with a wrap-around silicide source/drain contact structure

Fin-type transistors with spacers on the gates

Spacer structures on transistor devices

Shaped gate caps in spacer-lined openings

Finfet diffusion break having protective liner in fin insulator

Epitaxial region for embedded source/drain region having uniform thickness

TENCENT TECH SHENZHEN CO LTD

Character input method and apparatus