Inventor
SUH YOUSEOK
US36 patents
⚠️ This page may combine multiple inventors who share the name “SUH YOUSEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SPANSION LLC
13 patentsUS7416940B1Aug 26, 2008
Methods for fabricating flash memory devices
SPANSION LLC17 citations84
US7053445B1May 30, 2006
Memory device with barrier layer
SPANSION LLC11 citations84
US7907448B2Mar 15, 2011
Scaled down select gates of NAND flash memory cell strings and method of forming same
SPANSION LLC2 citations63
US7675104B2Mar 9, 2010
Integrated circuit memory system employing silicon rich layers
SPANSION LLC3 citations61
US7803680B2Sep 28, 2010
Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications
SPANSION LLC1 citations59
US9190531B2Nov 17, 2015
Flash memory cell with flair gate
SPANSION LLC0 citations52
US8367537B2Feb 5, 2013
Flash memory cell with a flair gate
SPANSION LLC0 citations52
US7943980B2May 17, 2011
Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductur applications
SPANSION LLC0 citations52
US7906395B2Mar 15, 2011
Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications
SPANSION LLC0 citations52
US7816724B2Oct 19, 2010
Memory device with barrier layer
SPANSION LLC0 citations52
US7998846B2Aug 16, 2011
3-D integrated circuit system and method
SPANSION LLC0 citations51
US9276007B2Mar 1, 2016
System and method for manufacturing self-aligned STI with single poly
SPANSION LLC0 citations50
US7848146B2Dec 7, 2010
Partial local self-boosting of a memory cell channel
SPANSION LLC1 citations48
CYPRESS SEMICONDUCTOR CORP
9 patentsUS10361215B2Jul 23, 2019
NAND memory cell string having a stacked select gate structure and process for for forming same
CYPRESS SEMICONDUCTOR CORP4 citations84
US10038004B2Jul 31, 2018
NAND memory cell string having a stacked select gate structure and process for for forming same
CYPRESS SEMICONDUCTOR CORP5 citations84
US9570458B2Feb 14, 2017
Gate fringing effect based channel formation for semiconductor device
CYPRESS SEMICONDUCTOR CORP5 citations83
US10566341B2Feb 18, 2020
NAND memory cell string having a stacked select gate structure and process for for forming same
CYPRESS SEMICONDUCTOR CORP3 citations73
US9449690B2Sep 20, 2016
Modified local segmented self-boosting of memory cell channels
CYPRESS SEMICONDUCTOR CORP6 citations73
US11069699B2Jul 20, 2021
NAND memory cell string having a stacked select gate structure and process for forming same
CYPRESS SEMICONDUCTOR CORP0 citations62
US10756101B2Aug 25, 2020
NAND memory cell string having a stacked select gate structure and process for for forming same
CYPRESS SEMICONDUCTOR CORP0 citations52
US9514824B2Dec 6, 2016
Partial local self boosting for NAND
CYPRESS SEMICONDUCTOR CORP1 citations52
US10297606B2May 21, 2019
Gate fringing effect based channel formation for semiconductor device
CYPRESS SEMICONDUCTOR CORP0 citations51
QUALCOMM INC
4 patentsUS10833017B2Nov 10, 2020
Contact for semiconductor device
QUALCOMM INC4 citations73
US11901434B2Feb 13, 2024
Semiconductor having a source/drain contact with a single inner spacer
QUALCOMM INC0 citations62
US11444201B2Sep 13, 2022
Leakage current reduction in polysilicon-on-active-edge structures
QUALCOMM INC0 citations62
US10600774B2Mar 24, 2020
Systems and methods for fabrication of gated diodes with selective epitaxial growth
QUALCOMM INC0 citations51