Inventor
CHANG SZU-YAO
TW11 patents
⚠️ This page may combine multiple inventors who share the name “CHANG SZU-YAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
10 patentsUS11574911B2Feb 7, 2023
Method for fabricating semiconductor device with protruding contact
NANYA TECHNOLOGY CORP0 citations62
US11469231B2Oct 11, 2022
Semiconductor device with protruding contact and method for fabricating the same
NANYA TECHNOLOGY CORP0 citations62
US12219749B2Feb 4, 2025
Method of manufacturing semiconductor device structure having a channel layer with different roughness
NANYA TECHNOLOGY CORP0 citations61
US12593444B2Mar 31, 2026
Method for manufacturing memory device having word line surrounding gate structure
NANYA TECHNOLOGY CORP0 citations59
US12575088B2Mar 10, 2026
Memory device having word line surrounding gate structure and manufacturing method thereof
NANYA TECHNOLOGY CORP0 citations59
US12526984B2Jan 13, 2026
Semiconductor structure and method of manufacturing the same
NANYA TECHNOLOGY CORP0 citations59
US11641734B2May 2, 2023
Method of forming a semiconductor structure having a gate structure electrically connected to a word line
NANYA TECHNOLOGY CORP0 citations59
US11342335B2May 24, 2022
Semiconductor structure having a gate structure portion in a word line
NANYA TECHNOLOGY CORP1 citations59
US11264389B2Mar 1, 2022
Stack capacitor structure and method for forming the same
NANYA TECHNOLOGY CORP1 citations59
US12363886B2Jul 15, 2025
Semiconductor device structure having a channel layer with different roughness
NANYA TECHNOLOGY CORP0 citations50