Inventor
CHOI YONGHYUK
KR28 patents
Patents
28 patentsUS11615855B2Mar 28, 2023
Nonvolatile memory device and method of programming in a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD8 citations85
US11205471B2Dec 21, 2021
Memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations83
US11515325B2Nov 29, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11495541B2Nov 8, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11275528B2Mar 15, 2022
Memory system and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11158379B2Oct 26, 2021
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11069417B2Jul 20, 2021
Memory system and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11043274B2Jun 22, 2021
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11450386B2Sep 20, 2022
Nonvolatile memory device performing two-way channel precharge
SAMSUNG ELECTRONICS CO LTD2 citations71
US12512170B2Dec 30, 2025
Method of determining and preprogramming over-erases groups of memory cells
SAMSUNG ELECTRONICS CO LTD0 citations62
US12224277B2Feb 11, 2025
Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12119046B2Oct 15, 2024
Nonvolatile memory device having multi-stack memory block and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11881272B2Jan 23, 2024
Nonvolatile memory device and method of programming in a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US11854982B2Dec 26, 2023
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11829645B2Nov 28, 2023
Memory system and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11797405B2Oct 24, 2023
Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping
SAMSUNG ELECTRONICS CO LTD0 citations62
US11798629B2Oct 24, 2023
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11709629B2Jul 25, 2023
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11581297B2Feb 14, 2023
Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11467932B2Oct 11, 2022
Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping
SAMSUNG ELECTRONICS CO LTD1 citations62
US11200002B2Dec 14, 2021
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations62
US12217807B2Feb 4, 2025
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US12525303B2Jan 13, 2026
Memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US12524162B2Jan 13, 2026
Nonvolatile memory device and method of programming a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations51
US11929118B2Mar 12, 2024
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11501847B2Nov 15, 2022
Nonvolatile memory device with address re-mapping
SAMSUNG ELECTRONICS CO LTD0 citations51
US11024363B2Jun 1, 2021
Memory device having different numbers of bits stored in memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US12387797B2Aug 12, 2025
Memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations47