P

Inventor

NAM SANGWAN

KR35 patents
⚠️ This page may combine multiple inventors who share the name “NAM SANGWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

34 patents
US11615855B2Mar 28, 2023

Nonvolatile memory device and method of programming in a nonvolatile memory

SAMSUNG ELECTRONICS CO LTD8 citations85
US11500706B2Nov 15, 2022

Operating method of a nonvolatile memory device for programming multi-page data

SAMSUNG ELECTRONICS CO LTD6 citations85
US11205471B2Dec 21, 2021

Memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD7 citations83
US12190954B2Jan 7, 2025

Memory device and program method of ground select transistors

SAMSUNG ELECTRONICS CO LTD3 citations74
US11437105B2Sep 6, 2022

Memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11386974B2Jul 12, 2022

Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same

SAMSUNG ELECTRONICS CO LTD1 citations72
US11961560B2Apr 16, 2024

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD4 citations69
US12181953B2Dec 31, 2024

Operating method of a nonvolatile memory device for programming multi-page data

SAMSUNG ELECTRONICS CO LTD0 citations62
US12094552B2Sep 17, 2024

Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11942154B2Mar 26, 2024

Non-volatile memory device and method of operating nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11881272B2Jan 23, 2024

Nonvolatile memory device and method of programming in a nonvolatile memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11815982B2Nov 14, 2023

Operating method of a nonvolatile memory device for programming multipage data

SAMSUNG ELECTRONICS CO LTD0 citations62
US11804280B2Oct 31, 2023

Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11797405B2Oct 24, 2023

Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping

SAMSUNG ELECTRONICS CO LTD0 citations62
US11709629B2Jul 25, 2023

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11626165B2Apr 11, 2023

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11467932B2Oct 11, 2022

Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping

SAMSUNG ELECTRONICS CO LTD1 citations62
US11200002B2Dec 14, 2021

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11056200B2Jul 6, 2021

Nonvolatile memory device and method of controlling initialization of the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11003393B2May 11, 2021

Nonvolatile memory device and method of controlling initialization of the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11798626B2Oct 24, 2023

Nonvolatile memory device and method of operating a nonvolatile memory

SAMSUNG ELECTRONICS CO LTD0 citations60
US11475956B2Oct 18, 2022

Nonvolatile memory device and method of operating a nonvolatile memory

SAMSUNG ELECTRONICS CO LTD1 citations60
US10984873B2Apr 20, 2021

Memory device for stabilizing internal voltage and method of stabilizing internal voltage of the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US11763879B2Sep 19, 2023

Memory device

SAMSUNG ELECTRONICS CO LTD1 citations58
US12562210B2Feb 24, 2026

Voltage supply circuit, memory device including the same, and operating method of memory device

SAMSUNG ELECTRONICS CO LTD0 citations57
US12477742B2Nov 18, 2025

Integrated circuit devices including arc protection diodes for memory structures

SAMSUNG ELECTRONICS CO LTD0 citations57
US11514997B2Nov 29, 2022

Controller, a storage device including the controller, and a reading method of the storage device

SAMSUNG ELECTRONICS CO LTD0 citations52
US12446235B2Oct 14, 2025

Integrated circuit device with vertical cell array and through electrodes

SAMSUNG ELECTRONICS CO LTD0 citations51
US11501847B2Nov 15, 2022

Nonvolatile memory device with address re-mapping

SAMSUNG ELECTRONICS CO LTD0 citations51
US12495556B2Dec 9, 2025

Memory devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US11848069B2Dec 19, 2023

Page buffer including latches and memory device including the page buffer

SAMSUNG ELECTRONICS CO LTD0 citations49
US12131798B2Oct 29, 2024

Non-volatile memory device for detecting defects of bit lines and word lines

SAMSUNG ELECTRONICS CO LTD0 citations47
US12100463B2Sep 24, 2024

Semiconductor memory device detecting defect, and operating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations44
US11915773B2Feb 27, 2024

Nonvolatile memory device and method of detecting wordline defect of the same

SAMSUNG ELECTRONICS CO LTD0 citations44

HAN JINMAN

1 patent