Inventor
YU JAEDUK
KR27 patents
Patents
27 patentsUS11615855B2Mar 28, 2023
Nonvolatile memory device and method of programming in a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD8 citations85
US11854623B2Dec 26, 2023
Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methods
SAMSUNG ELECTRONICS CO LTD2 citations72
US11275528B2Mar 15, 2022
Memory system and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11132312B2Sep 28, 2021
Method of controlling initialization of nonvolatile memory device and memory system including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11069417B2Jul 20, 2021
Memory system and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US12512170B2Dec 30, 2025
Method of determining and preprogramming over-erases groups of memory cells
SAMSUNG ELECTRONICS CO LTD0 citations62
US12224277B2Feb 11, 2025
Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12147666B2Nov 19, 2024
Non-volatile memory device including multi-stack memory block and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12119046B2Oct 15, 2024
Nonvolatile memory device having multi-stack memory block and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11881272B2Jan 23, 2024
Nonvolatile memory device and method of programming in a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US11829645B2Nov 28, 2023
Memory system and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11797405B2Oct 24, 2023
Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping
SAMSUNG ELECTRONICS CO LTD0 citations62
US11709629B2Jul 25, 2023
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11581297B2Feb 14, 2023
Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11467932B2Oct 11, 2022
Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping
SAMSUNG ELECTRONICS CO LTD1 citations62
US11380405B2Jul 5, 2022
Storage device calculating optimal read voltage using degradation information
SAMSUNG ELECTRONICS CO LTD1 citations62
US11200002B2Dec 14, 2021
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11183250B2Nov 23, 2021
Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methods
SAMSUNG ELECTRONICS CO LTD0 citations61
US12494257B2Dec 9, 2025
Memory device including string select transistors having different threshold voltages and method of operating the memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US12525303B2Jan 13, 2026
Memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US12444470B2Oct 14, 2025
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US12057391B2Aug 6, 2024
Semiconductor device and massive data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11929118B2Mar 12, 2024
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11501847B2Nov 15, 2022
Nonvolatile memory device with address re-mapping
SAMSUNG ELECTRONICS CO LTD0 citations51
US11315649B2Apr 26, 2022
Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methods
SAMSUNG ELECTRONICS CO LTD0 citations51
US11024363B2Jun 1, 2021
Memory device having different numbers of bits stored in memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US12573455B2Mar 10, 2026
Nonvolatile memory device and method of controlling using time division enable switches
SAMSUNG ELECTRONICS CO LTD0 citations50