P

Inventor

LIM BONGSOON

KR42 patents
⚠️ This page may combine multiple inventors who share the name “LIM BONGSOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

41 patents
US9786372B2Oct 10, 2017

Nonvolatile memory device and wordline driving method thereof

SAMSUNG ELECTRONICS CO LTD9 citations82
US9870833B2Jan 16, 2018

Nonvolatile memory device including page buffer and method for verifying program operation thereof

SAMSUNG ELECTRONICS CO LTD7 citations80
US12131784B2Oct 29, 2024

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11515325B2Nov 29, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11495541B2Nov 8, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11275528B2Mar 15, 2022

Memory system and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US11227660B2Jan 18, 2022

Memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72
US11158379B2Oct 26, 2021

Nonvolatile memory device, storage device, and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11069417B2Jul 20, 2021

Memory system and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US11043274B2Jun 22, 2021

Nonvolatile memory device, storage device, and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US10546875B2Jan 28, 2020

Semiconductor memory device including a capacitor

SAMSUNG ELECTRONICS CO LTD3 citations71
US11011208B2May 18, 2021

Semiconductor memory device including parallel substrates in three dimensional structures

SAMSUNG ELECTRONICS CO LTD3 citations69
US12224277B2Feb 11, 2025

Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11942154B2Mar 26, 2024

Non-volatile memory device and method of operating nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11854982B2Dec 26, 2023

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11829645B2Nov 28, 2023

Memory system and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11797405B2Oct 24, 2023

Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping

SAMSUNG ELECTRONICS CO LTD0 citations62
US11798629B2Oct 24, 2023

Nonvolatile memory device, storage device, and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11709629B2Jul 25, 2023

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11581297B2Feb 14, 2023

Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11467932B2Oct 11, 2022

Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping

SAMSUNG ELECTRONICS CO LTD1 citations62
US11227659B2Jan 18, 2022

Nonvolatile memory device and storage device including nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11200002B2Dec 14, 2021

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11062775B2Jul 13, 2021

Nonvolatile memory device and storage device including nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11830558B2Nov 28, 2023

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11355205B2Jun 7, 2022

Memory device

SAMSUNG ELECTRONICS CO LTD1 citations61
US12493548B2Dec 9, 2025

Memory device reducing i/o signal lines through i/o mapping connection and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US12282664B2Apr 22, 2025

Storage devices including nonvolatile memory and related methods of operating such storage devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US12120881B2Oct 15, 2024

Three-dimensional semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US11367735B2Jun 21, 2022

Three-dimensional semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US12501621B2Dec 16, 2025

Semiconductor device and electronic system therewith

SAMSUNG ELECTRONICS CO LTD0 citations51
US12089408B2Sep 10, 2024

Non-volatile memory device including common source line tapping wire connected to common source line plate by vias on lower metal line and through-hole vias

SAMSUNG ELECTRONICS CO LTD0 citations51
US11501847B2Nov 15, 2022

Nonvolatile memory device with address re-mapping

SAMSUNG ELECTRONICS CO LTD0 citations51
US11024363B2Jun 1, 2021

Memory device having different numbers of bits stored in memory cells

SAMSUNG ELECTRONICS CO LTD0 citations51
US10796767B2Oct 6, 2020

Memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations51
US10346097B2Jul 9, 2019

Nonvolatile memory device and storage device including nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12495556B2Dec 9, 2025

Memory devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US12488856B2Dec 2, 2025

Memory device, operation method of memory device, and operation method of test device configured to test memory device

SAMSUNG ELECTRONICS CO LTD0 citations47
US12451182B2Oct 21, 2025

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations46
US11830805B2Nov 28, 2023

Vertical memory device

SAMSUNG ELECTRONICS CO LTD0 citations44
US10685713B2Jun 16, 2020

Storage device including nonvolatile memory device and controller

SAMSUNG ELECTRONICS CO LTD0 citations37

LIM BONGSOON

1 patent