Inventor

HSIEH MIN-YANN

TW26 patents

⚠️ This page may combine multiple inventors who share the name “HSIEH MIN-YANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSIEH MIN-YANN

TAIWAN SEMICONDUCTOR MFG CO LTD

FinFET structure with controlled air gaps

Sidewall spacers for self-aligned contacts

Semiconductor device and manufacturing method thereof

Vias for cobalt-based interconnects and methods of fabrication thereof

Method for integrated circuit patterning

Contact plugs and methods forming same

Vias for cobalt-based interconnects and methods of fabrication thereof

Semiconductor device and manufacturing method thereof

Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device

Method for integrated circuit patterning

Contact plugs and methods forming same

FinFET structure with controlled air gaps

Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device

Semiconductor device with source/drain contact

FinFET structure with controlled air gaps

Vias for cobalt-based interconnects and methods of fabrication thereof

FinFET isolation structure and method for fabricating the same

Contact plugs and methods forming same

Contact plugs and methods forming same

Structure with embedded memory device and contact isolation scheme

FinFET structure with controlled air gaps

FinFET isolation structure and method for fabricating the same

Method for manufacturing a semiconductor device

Structure with embedded memory device and contact isolation scheme

PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC

Vias for cobalt-based interconnects and methods of fabrication thereof

TAIWAN SEMOCONDUCTOR MFG CO LTD

Sidewall spacers for self-aligned contacts