Inventor
SU YI-NIEN
TW45 patents
⚠️ This page may combine multiple inventors who share the name “SU YI-NIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS9881794B1Jan 30, 2018
Semiconductor methods and devices
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US12388008B2Aug 12, 2025
Semiconductor interconnect structure with bottom self-aligned via landing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US10867840B2Dec 15, 2020
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10867804B2Dec 15, 2020
Patterning method for semiconductor device and structures resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10276381B2Apr 30, 2019
Semiconductor methods and devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11715640B2Aug 1, 2023
Patterning material including silicon-containing layer and method for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12237214B2Feb 25, 2025
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12205824B2Jan 21, 2025
Patterning material including silicon-containing layer and method for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183628B2Dec 31, 2024
Integrated circuit and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12153350B2Nov 26, 2024
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142520B2Nov 12, 2024
Middle-of-line interconnect structure having air gap and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12014952B2Jun 18, 2024
Lithography method to reduce spacing between interconnect wires in interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11796922B2Oct 24, 2023
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11735469B2Aug 22, 2023
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728209B2Aug 15, 2023
Lithography method to reduce spacing between interconnect wires in interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11710657B2Jul 25, 2023
Middle-of-line interconnect structure having air gap and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11456210B2Sep 27, 2022
Integrated circuit and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11355642B2Jun 7, 2022
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11322393B2May 3, 2022
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10483397B2Nov 19, 2019
Fin field effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9530728B2Dec 27, 2016
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US9425091B2Aug 23, 2016
Method for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12412778B2Sep 9, 2025
Method for reducing line end spacing and semiconductor devices manufactured thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12218007B2Feb 4, 2025
Self-aligned via formation using spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12170205B2Dec 17, 2024
Methods for fabricating semiconductor structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12165914B2Dec 10, 2024
Air spacer surrounding conductive features and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840097B2Nov 17, 2020
Semiconductor methods and devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10109522B2Oct 23, 2018
Method for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
15 patentsUS7094689B2Aug 22, 2006
Air gap interconnect structure and method thereof
TAIWAN SEMICONDUCTOR MFG23 citations92
US7015133B2Mar 21, 2006
Dual damascene structure formed of low-k dielectric materials
TAIWAN SEMICONDUCTOR MFG31 citations92
US6797627B1Sep 28, 2004
Dry-wet-dry solvent-free process after stop layer etch in dual damascene process
TAIWAN SEMICONDUCTOR MFG35 citations88
US9041216B2May 26, 2015
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG6 citations84
US9129965B2Sep 8, 2015
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG4 citations73
US7217663B2May 15, 2007
Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG7 citations73
US7029992B2Apr 18, 2006
Low oxygen content photoresist stripping process for low dielectric constant materials
TAIWAN SEMICONDUCTOR MFG9 citations73
US6828251B2Dec 7, 2004
Method for improved plasma etching control
TAIWAN SEMICONDUCTOR MFG12 citations71
US7196002B2Mar 27, 2007
Method of making dual damascene with via etch through
TAIWAN SEMICONDUCTOR MFG5 citations63
US7598176B2Oct 6, 2009
Method for photoresist stripping and treatment of low-k dielectric material
TAIWAN SEMICONDUCTOR MFG2 citations62
US9355894B2May 31, 2016
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9082770B2Jul 14, 2015
Damascene gap structure
TAIWAN SEMICONDUCTOR MFG0 citations52
US7875547B2Jan 25, 2011
Contact hole structures and contact structures and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG0 citations52
US7436009B2Oct 14, 2008
Via structures and trench structures and dual damascene structures
TAIWAN SEMICONDUCTOR MFG0 citations51
US7400401B2Jul 15, 2008
Measuring low dielectric constant film properties during processing
TAIWAN SEMICONDUCTOR MFG0 citations41