P

Inventor

MUKESH SAGARIKA

US25 patents
⚠️ This page may combine multiple inventors who share the name “MUKESH SAGARIKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

23 patents
US12268031B2Apr 1, 2025

Backside power rails and power distribution network for density scaling

IBM2 citations74
US11380836B2Jul 5, 2022

Topological qubit device

IBM5 citations73
US11908791B2Feb 20, 2024

Partial subtractive supervia enabling hyper-scaling

IBM2 citations72
US12394660B2Aug 19, 2025

Buried power rail after replacement metal gate

IBM1 citations63
US12484297B2Nov 25, 2025

Forksheet transistor with dual depth late cell boundary cut

IBM0 citations62
US12243913B2Mar 4, 2025

Self-aligned backside contact integration for transistors

IBM1 citations62
US12080709B2Sep 3, 2024

Dual inner spacer epitaxy in monolithic stacked FETs

IBM0 citations62
US11894361B2Feb 6, 2024

Co-integrated logic, electrostatic discharge, and well contact devices on a substrate

IBM0 citations62
US11094590B1Aug 17, 2021

Structurally stable self-aligned subtractive vias

IBM0 citations62
US12494408B2Dec 9, 2025

Double patterned microcooler having alternating fin widths

IBM0 citations61
US12417926B2Sep 16, 2025

Circuit interconnect structure

IBM0 citations61
US12438085B2Oct 7, 2025

Via to backside power rail through active region

IBM0 citations60
US12243771B2Mar 4, 2025

Selective patterning of vias with hardmasks

IBM0 citations60
US11276607B2Mar 15, 2022

Selective patterning of vias with hardmasks

IBM0 citations60
US12148699B2Nov 19, 2024

High aspect ratio buried power rail metallization

IBM0 citations57
US12564718B2Mar 3, 2026

Magnetic electrode cochlear implant with in-situ stimulation adjustments

IBM0 citations52
US12568806B2Mar 3, 2026

Conformal dielectric cap for subtractive vias

IBM0 citations52
US12317555B2May 27, 2025

Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor

IBM0 citations52
US11956296B2Apr 9, 2024

Stream alterations under limited bandwidth conditions

IBM0 citations52
US12550705B2Feb 10, 2026

Self-aligned backside gate contact

IBM0 citations51
US11189527B2Nov 30, 2021

Self-aligned top vias over metal lines formed by a damascene process

IBM0 citations51
US12490480B2Dec 2, 2025

Stacked FETS with contact placeholder structures

IBM0 citations50
US12334398B2Jun 17, 2025

Multilayer dielectric stack for damascene top-via integration

IBM0 citations48

INT BUSINESS MACHINES CORPORATION

1 patent

TAIWAN SEMICONDUCTOR MFG CO LTD

1 patent