Inventor
MUKESH SAGARIKA
US25 patents
⚠️ This page may combine multiple inventors who share the name “MUKESH SAGARIKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
23 patentsUS12268031B2Apr 1, 2025
Backside power rails and power distribution network for density scaling
IBM2 citations74
US11380836B2Jul 5, 2022
Topological qubit device
IBM5 citations73
US11908791B2Feb 20, 2024
Partial subtractive supervia enabling hyper-scaling
IBM2 citations72
US12394660B2Aug 19, 2025
Buried power rail after replacement metal gate
IBM1 citations63
US12484297B2Nov 25, 2025
Forksheet transistor with dual depth late cell boundary cut
IBM0 citations62
US12243913B2Mar 4, 2025
Self-aligned backside contact integration for transistors
IBM1 citations62
US12080709B2Sep 3, 2024
Dual inner spacer epitaxy in monolithic stacked FETs
IBM0 citations62
US11894361B2Feb 6, 2024
Co-integrated logic, electrostatic discharge, and well contact devices on a substrate
IBM0 citations62
US11094590B1Aug 17, 2021
Structurally stable self-aligned subtractive vias
IBM0 citations62
US12494408B2Dec 9, 2025
Double patterned microcooler having alternating fin widths
IBM0 citations61
US12417926B2Sep 16, 2025
Circuit interconnect structure
IBM0 citations61
US12438085B2Oct 7, 2025
Via to backside power rail through active region
IBM0 citations60
US12243771B2Mar 4, 2025
Selective patterning of vias with hardmasks
IBM0 citations60
US11276607B2Mar 15, 2022
Selective patterning of vias with hardmasks
IBM0 citations60
US12148699B2Nov 19, 2024
High aspect ratio buried power rail metallization
IBM0 citations57
US12564718B2Mar 3, 2026
Magnetic electrode cochlear implant with in-situ stimulation adjustments
IBM0 citations52
US12568806B2Mar 3, 2026
Conformal dielectric cap for subtractive vias
IBM0 citations52
US12317555B2May 27, 2025
Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor
IBM0 citations52
US11956296B2Apr 9, 2024
Stream alterations under limited bandwidth conditions
IBM0 citations52
US12550705B2Feb 10, 2026
Self-aligned backside gate contact
IBM0 citations51
US11189527B2Nov 30, 2021
Self-aligned top vias over metal lines formed by a damascene process
IBM0 citations51
US12490480B2Dec 2, 2025
Stacked FETS with contact placeholder structures
IBM0 citations50
US12334398B2Jun 17, 2025
Multilayer dielectric stack for damascene top-via integration
IBM0 citations48