Inventor
MIHASHI YUTAKA
JP29 patents
Patents
29 patentsUS5880485AMar 9, 1999
Semiconductor device including Gallium nitride layer
MITSUBISHI ELECTRIC CORP116 citations96
US4998258AMar 5, 1991
Semiconductor laser device
MITSUBISHI ELECTRIC CORP114 citations96
US5835516ANov 10, 1998
Semiconductor laser device and method of fabricating semiconductor laser device
MITSUBISHI ELECTRIC CORP24 citations92
US5675601AOct 7, 1997
Semiconductor laser device
MITSUBISHI ELECTRIC CORP27 citations92
US5439723AAug 8, 1995
Substrate for producing semiconductor wafer
MITSUBISHI ELECTRIC CORP28 citations92
US4924474AMay 8, 1990
Laser device with high oscillation efficiency
MITSUBISHI ELECTRIC CORP30 citations92
US5436195AJul 25, 1995
Method of fabricating an integrated semiconductor light modulator and laser
MITSUBISHI ELECTRIC CORP30 citations89
US6018539AJan 25, 2000
Semiconductor laser and method of fabricating semiconductor laser
MITSUBISHI ELECTRIC CORP24 citations88
US5684823ANov 4, 1997
Method of fabricating a diffraction grating and a distributed feedback semiconductor laser incorporating the diffraction grating
MITSUBISHI ELECTRIC CORP16 citations82
US5279077AJan 18, 1994
Method for producing semiconductor wafer
MITSUBISHI ELECTRIC CORP17 citations82
US4667332AMay 19, 1987
Semiconductor laser element suitable for production by a MO-CVD method
MITSUBISHI ELECTRIC CORP22 citations82
US5518955AMay 21, 1996
Method of fabricating quantum wire
MITSUBISHI ELECTRIC CORP13 citations74
US5311046AMay 10, 1994
Long wavelength transmitter opto-electronic integrated circuit
MITSUBISHI ELECTRIC CORP10 citations74
US5218614AJun 8, 1993
Semiconductor laser device
MITSUBISHI ELECTRIC CORP7 citations74
US4734385AMar 29, 1988
Semiconductor laser element suitable for production by a MO-CVD method
MITSUBISHI ELECTRIC CORP10 citations74
US7187701B2Mar 6, 2007
Ridge waveguide semiconductor laser
MITSUBISHI ELECTRIC CORP9 citations73
US5763287AJun 9, 1998
Method of fabricating semiconductor optical device
MITSUBISHI ELECTRIC CORP16 citations73
US4914668AApr 3, 1990
Semiconductor laser including a reflection film
MITSUBISHI ELECTRIC CORP10 citations73
US4151011AApr 24, 1979
Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure
MITSUBISHI ELECTRIC CORP13 citations70
US4841535AJun 20, 1989
Semiconductor laser device
MITSUBISHI ELECTRIC CORP5 citations63
US4833510AMay 23, 1989
Semiconductor laser array with independently usable laser light emission regions formed in a single active layer
MITSUBISHI ELECTRIC CORP5 citations63
US4733399AMar 22, 1988
Semiconductor laser device having integral optical output modulator
MITSUBISHI ELECTRIC CORP6 citations63
US7675954B2Mar 9, 2010
Semiconductor laser device
MITSUBISHI ELECTRIC CORP6 citations62
US6768760B2Jul 27, 2004
Ridge-waveguide semiconductor laser device
MITSUBISHI ELECTRIC CORP5 citations62
US5838704ANov 17, 1998
Pulsation laser having an active region with a thicker central region in a resonator length direction
MITSUBISHI ELECTRIC CORP2 citations62
US4829023AMay 9, 1989
Method of producing a semiconductor laser
MITSUBISHI ELECTRIC CORP6 citations62
US4210466AJul 1, 1980
Process for preparing heat sensitive semiconductor switch
MITSUBISHI ELECTRIC CORP1 citations52
US6275515B1Aug 14, 2001
Semiconductor laser device and method of producing the same
MITSUBISHI ELECTRIC CORP1 citations51
US4353754AOct 12, 1982
Thermo-sensitive switching element manufacturing method
MITSUBISHI ELECTRIC CORP1 citations47