Inventor
MEGURO HISATAKA
JP19 patents
⚠️ This page may combine multiple inventors who share the name “MEGURO HISATAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
8 patentsUS6878985B2Apr 12, 2005
Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode
TOSHIBA KK37 citations93
US7868376B2Jan 11, 2011
Semiconductor storage device and method for manufacturing the same
TOSHIBA KK26 citations92
US6235589B1May 22, 2001
Method of making non-volatile memory with polysilicon spacers
TOSHIBA KK51 citations92
US5880498AMar 9, 1999
Semiconductor device having a nitrogen doped polysilicon layer
TOSHIBA KK17 citations84
US6876565B2Apr 5, 2005
Semiconductor memory device
TOSHIBA KK14 citations83
US6657251B1Dec 2, 2003
Semiconductor memory device having memory transistors with gate electrodes of a double-layer stacked structure and method of fabricating the same
TOSHIBA KK15 citations83
US7718483B2May 18, 2010
Method of manufacturing non-volatile semiconductor memory
TOSHIBA KK4 citations63
US7718474B2May 18, 2010
Semiconductor device and method of manufacturing the same
TOSHIBA KK2 citations61
TOSHIBA MEMORY CORP
3 patentsUS10367000B2Jul 30, 2019
Semiconductor device and method for manufacturing same
TOSHIBA MEMORY CORP3 citations73
US9865616B2Jan 9, 2018
Semiconductor memory device and method for manufacturing same
TOSHIBA MEMORY CORP5 citations73
US9953998B2Apr 24, 2018
Semiconductor memory device and method for manufacturing same
TOSHIBA MEMORY CORP0 citations51
NAGASHIMA SATOSHI
3 patentsUS8541830B1Sep 24, 2013
Nonvolatile semiconductor memory device and method for manufacturing the same
NAGASHIMA SATOSHI5 citations71
US9059035B2Jun 16, 2015
Nonvolatile semiconductor device and its manufacturing method having memory cells with multiple layers
NAGASHIMA SATOSHI1 citations50
US8748965B2Jun 10, 2014
Nonvolatile semiconductor memory device
NAGASHIMA SATOSHI1 citations48