P

Inventor

ARAI FUMITAKA

JP202 patents
⚠️ This page may combine multiple inventors who share the name “ARAI FUMITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

42 patents
US8044448B2Oct 25, 2011

Nonvolatile semiconductor memory device

TOSHIBA KK227 citations99
US8008732B2Aug 30, 2011

Semiconductor memory and method of manufacturing the same

TOSHIBA KK244 citations99
US7696559B2Apr 13, 2010

Semiconductor memory device including pillar-shaped semiconductor layers and a method of fabricating the same

TOSHIBA KK221 citations99
US6859394B2Feb 22, 2005

NAND type non-volatile semiconductor memory device

TOSHIBA KK140 citations99
US6798698B2Sep 28, 2004

Nonvolatile semiconductor memory device

TOSHIBA KK106 citations99
US6549464B2Apr 15, 2003

Nonvolatile semiconductor memory device

TOSHIBA KK92 citations99
US6222225B1Apr 24, 2001

Semiconductor device and manufacturing method thereof

TOSHIBA KK176 citations99
US6134140AOct 17, 2000

Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells

TOSHIBA KK262 citations99
US7884417B2Feb 8, 2011

Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device

TOSHIBA KK56 citations98
US7796439B2Sep 14, 2010

Semiconductor memory device and write method thereof

TOSHIBA KK61 citations98
US7026684B2Apr 11, 2006

Nonvolatile semiconductor memory device

TOSHIBA KK81 citations98
US6859395B2Feb 22, 2005

NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages

TOSHIBA KK106 citations98
US6493265B2Dec 10, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK96 citations98
US6208560B1Mar 27, 2001

Nonvolatile semiconductor memory device

TOSHIBA KK73 citations97
US6940752B2Sep 6, 2005

Nonvolatile semiconductor memory device

TOSHIBA KK23 citations96
US6930921B2Aug 16, 2005

NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages

TOSHIBA KK56 citations96
US6784503B2Aug 31, 2004

Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration

TOSHIBA KK39 citations96
US6434055B2Aug 13, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK52 citations96
US6314026B1Nov 6, 2001

Nonvolatile semiconductor device using local self boost technique

TOSHIBA KK65 citations96
US8048741B2Nov 1, 2011

Semiconductor memory device and method of fabricating the same

TOSHIBA KK26 citations93
US8022464B2Sep 20, 2011

Semiconductor memory device and manufacturing method thereof

TOSHIBA KK16 citations93
US7875922B2Jan 25, 2011

Nonvolatile semiconductor memory and process of producing the same

TOSHIBA KK39 citations93
US7746707B2Jun 29, 2010

Nonvolatile semiconductor memory device

TOSHIBA KK10 citations93
US7649777B2Jan 19, 2010

Nonvolatile semiconductor memory cell matrix with divided write/erase, a method for operating the same, monolithic integrated circuits and systems

TOSHIBA KK30 citations93
US7408811B2Aug 5, 2008

NAND-type flash memory on an SOI substrate with a carrier discharging operation

TOSHIBA KK16 citations93
US7310270B2Dec 18, 2007

Nonvolatile semiconductor memory device

TOSHIBA KK10 citations93
US7244984B2Jul 17, 2007

Nonvolatile semiconductor memory including two memory cell columns sharing a single bit line

TOSHIBA KK26 citations93
US7184309B2Feb 27, 2007

Non-volatile semiconductor memory device

TOSHIBA KK19 citations93
US7092294B2Aug 15, 2006

Nonvolatile semiconductor memory

TOSHIBA KK26 citations93
US7078813B2Jul 18, 2006

Semiconductor device with double barrier film

TOSHIBA KK19 citations93
US7078763B2Jul 18, 2006

Nonvolatile semiconductor memory device including improved gate electrode

TOSHIBA KK27 citations93
US7027329B2Apr 11, 2006

Nonvolatile semiconductor memory and programming method for the same

TOSHIBA KK20 citations93
US7005714B2Feb 28, 2006

Nonvolatile semiconductor memory and manufacturing method for the same

TOSHIBA KK26 citations93
US6878985B2Apr 12, 2005

Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode

TOSHIBA KK37 citations93
US6807104B2Oct 19, 2004

Nonvolatile semiconductor memory device and data program method thereof

TOSHIBA KK37 citations93
US6680230B2Jan 20, 2004

Semiconductor device and method of fabricating the same

TOSHIBA KK36 citations93
US6459612B2Oct 1, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK28 citations93
US7781807B2Aug 24, 2010

Non-volatile semiconductor storage device

TOSHIBA KK21 citations92
US7332766B2Feb 19, 2008

Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate

TOSHIBA KK28 citations92
US7023049B2Apr 4, 2006

Semiconductor device including nonvolatile memory

TOSHIBA KK24 citations92
US6413809B2Jul 2, 2002

Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trench

TOSHIBA KK27 citations92
US6943402B2Sep 13, 2005

Nonvolatile semiconductor memory device including MOS transistors each having a floating gate and control gate

TOSHIBA KK20 citations91

TOSHIBA MEMORY CORP

4 patents

TOKYO SHIBAURA ELECTRIC CO

1 patent

FUTATSUYAMA TAKUYA

1 patent

TANAKA TOMOHARU

1 patent

ARAI FUMITAKA

1 patent

Showing the top 50 of 202 patents by PatentIndex Score.