Inventor
ARAI FUMITAKA
JP202 patents
⚠️ This page may combine multiple inventors who share the name “ARAI FUMITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
42 patentsUS8044448B2Oct 25, 2011
Nonvolatile semiconductor memory device
TOSHIBA KK227 citations99
US8008732B2Aug 30, 2011
Semiconductor memory and method of manufacturing the same
TOSHIBA KK244 citations99
US7696559B2Apr 13, 2010
Semiconductor memory device including pillar-shaped semiconductor layers and a method of fabricating the same
TOSHIBA KK221 citations99
US6859394B2Feb 22, 2005
NAND type non-volatile semiconductor memory device
TOSHIBA KK140 citations99
US6798698B2Sep 28, 2004
Nonvolatile semiconductor memory device
TOSHIBA KK106 citations99
US6549464B2Apr 15, 2003
Nonvolatile semiconductor memory device
TOSHIBA KK92 citations99
US6222225B1Apr 24, 2001
Semiconductor device and manufacturing method thereof
TOSHIBA KK176 citations99
US6134140AOct 17, 2000
Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells
TOSHIBA KK262 citations99
US7884417B2Feb 8, 2011
Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device
TOSHIBA KK56 citations98
US7796439B2Sep 14, 2010
Semiconductor memory device and write method thereof
TOSHIBA KK61 citations98
US7026684B2Apr 11, 2006
Nonvolatile semiconductor memory device
TOSHIBA KK81 citations98
US6859395B2Feb 22, 2005
NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages
TOSHIBA KK106 citations98
US6493265B2Dec 10, 2002
Nonvolatile semiconductor memory device
TOSHIBA KK96 citations98
US6208560B1Mar 27, 2001
Nonvolatile semiconductor memory device
TOSHIBA KK73 citations97
US6940752B2Sep 6, 2005
Nonvolatile semiconductor memory device
TOSHIBA KK23 citations96
US6930921B2Aug 16, 2005
NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages
TOSHIBA KK56 citations96
US6784503B2Aug 31, 2004
Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
TOSHIBA KK39 citations96
US6434055B2Aug 13, 2002
Nonvolatile semiconductor memory device
TOSHIBA KK52 citations96
US6314026B1Nov 6, 2001
Nonvolatile semiconductor device using local self boost technique
TOSHIBA KK65 citations96
US8048741B2Nov 1, 2011
Semiconductor memory device and method of fabricating the same
TOSHIBA KK26 citations93
US8022464B2Sep 20, 2011
Semiconductor memory device and manufacturing method thereof
TOSHIBA KK16 citations93
US7875922B2Jan 25, 2011
Nonvolatile semiconductor memory and process of producing the same
TOSHIBA KK39 citations93
US7746707B2Jun 29, 2010
Nonvolatile semiconductor memory device
TOSHIBA KK10 citations93
US7649777B2Jan 19, 2010
Nonvolatile semiconductor memory cell matrix with divided write/erase, a method for operating the same, monolithic integrated circuits and systems
TOSHIBA KK30 citations93
US7408811B2Aug 5, 2008
NAND-type flash memory on an SOI substrate with a carrier discharging operation
TOSHIBA KK16 citations93
US7310270B2Dec 18, 2007
Nonvolatile semiconductor memory device
TOSHIBA KK10 citations93
US7244984B2Jul 17, 2007
Nonvolatile semiconductor memory including two memory cell columns sharing a single bit line
TOSHIBA KK26 citations93
US7184309B2Feb 27, 2007
Non-volatile semiconductor memory device
TOSHIBA KK19 citations93
US7092294B2Aug 15, 2006
Nonvolatile semiconductor memory
TOSHIBA KK26 citations93
US7078813B2Jul 18, 2006
Semiconductor device with double barrier film
TOSHIBA KK19 citations93
US7078763B2Jul 18, 2006
Nonvolatile semiconductor memory device including improved gate electrode
TOSHIBA KK27 citations93
US7027329B2Apr 11, 2006
Nonvolatile semiconductor memory and programming method for the same
TOSHIBA KK20 citations93
US7005714B2Feb 28, 2006
Nonvolatile semiconductor memory and manufacturing method for the same
TOSHIBA KK26 citations93
US6878985B2Apr 12, 2005
Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode
TOSHIBA KK37 citations93
US6807104B2Oct 19, 2004
Nonvolatile semiconductor memory device and data program method thereof
TOSHIBA KK37 citations93
US6680230B2Jan 20, 2004
Semiconductor device and method of fabricating the same
TOSHIBA KK36 citations93
US6459612B2Oct 1, 2002
Nonvolatile semiconductor memory device
TOSHIBA KK28 citations93
US7781807B2Aug 24, 2010
Non-volatile semiconductor storage device
TOSHIBA KK21 citations92
US7332766B2Feb 19, 2008
Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate
TOSHIBA KK28 citations92
US7023049B2Apr 4, 2006
Semiconductor device including nonvolatile memory
TOSHIBA KK24 citations92
US6413809B2Jul 2, 2002
Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trench
TOSHIBA KK27 citations92
US6943402B2Sep 13, 2005
Nonvolatile semiconductor memory device including MOS transistors each having a floating gate and control gate
TOSHIBA KK20 citations91
TOSHIBA MEMORY CORP
4 patentsUS10074667B1Sep 11, 2018
Semiconductor memory device
TOSHIBA MEMORY CORP162 citations99
US10043808B1Aug 7, 2018
Semiconductor memory
TOSHIBA MEMORY CORP21 citations94
US11101325B2Aug 24, 2021
Semiconductor memory and method of manufacturing the same
TOSHIBA MEMORY CORP5 citations84
US10763272B2Sep 1, 2020
Semiconductor memory device
TOSHIBA MEMORY CORP7 citations84
TOKYO SHIBAURA ELECTRIC CO
1 patentFUTATSUYAMA TAKUYA
1 patentTANAKA TOMOHARU
1 patentARAI FUMITAKA
1 patentShowing the top 50 of 202 patents by PatentIndex Score.