Inventor
HUANG CHIA-EN
TW251 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHIA-EN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
49 patentsUS11563015B2Jan 24, 2023
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11532752B2Dec 20, 2022
Non-volatile memory device with reduced area
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11404099B1Aug 2, 2022
Using split word lines and switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11238904B1Feb 1, 2022
Using embedded switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11735280B2Aug 22, 2023
Memory device and operating method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations85
US11521663B2Dec 6, 2022
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11094387B2Aug 17, 2021
Multi-fuse memory cell circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11018260B2May 25, 2021
Non-volatile memory device with reduced area
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10971505B1Apr 6, 2021
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10878934B2Dec 29, 2020
Memory device and electronic device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9449663B2Sep 20, 2016
Circuit for memory write data operation
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9449656B2Sep 20, 2016
Memory with bit cell header transistor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11367507B2Jun 21, 2022
Memory device and electronic device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US12198785B1Jan 14, 2025
Semiconductor memory devices with dielectric fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US12063786B2Aug 13, 2024
Compute-in-memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11950411B2Apr 2, 2024
Semiconductor memory devices with dielectric fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11696449B2Jul 4, 2023
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12062408B2Aug 13, 2024
Switches to reduce routing rails of memory system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12027204B2Jul 2, 2024
Memory including metal rails with balanced loading
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12014768B2Jun 18, 2024
DRAM computation circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12002499B2Jun 4, 2024
Using split word lines and switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11997843B2May 28, 2024
4CPP SRAM cell and array
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11996409B2May 28, 2024
Stacking CMOS structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11942177B2Mar 26, 2024
Using embedded switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915787B2Feb 27, 2024
Integrated circuit device and methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901035B2Feb 13, 2024
Method of differentiated thermal throttling of memory and system therefor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11869971B2Jan 9, 2024
Multi-bit memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854914B2Dec 26, 2023
Systems and methods of testing memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856762B2Dec 26, 2023
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856761B2Dec 26, 2023
Semiconductor memory devices with different doping types
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854616B2Dec 26, 2023
Memory including metal rails with balanced loading
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848381B2Dec 19, 2023
Methods of operating multi-bit memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11837300B2Dec 5, 2023
Multi-fuse memory cell circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11791005B2Oct 17, 2023
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11756640B2Sep 12, 2023
MIM efuse memory devices and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11758717B2Sep 12, 2023
Semiconductor memory devices with one-sided staircase profiles and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11756591B2Sep 12, 2023
Switches to reduce routing rails of memory system
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11749664B2Sep 5, 2023
Memory circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11744080B2Aug 29, 2023
Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11653492B2May 16, 2023
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11605639B2Mar 14, 2023
One-time-programmable memory device including an antifuse structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569223B2Jan 31, 2023
Integrated circuit and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532746B2Dec 20, 2022
Multi-bit memory storage device and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11501051B2Nov 15, 2022
Memory device, integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450362B2Sep 20, 2022
Memory device, integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11423960B2Aug 23, 2022
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11424233B1Aug 23, 2022
Memory circuits and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11410740B2Aug 9, 2022
Multi-fuse memory cell circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11195567B2Dec 7, 2021
Balanced negative bitline voltage for a write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
TAIWAN SEMICONDUCTOR MFG
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