Inventor
WANG YIH
TW238 patents
⚠️ This page may combine multiple inventors who share the name “WANG YIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
40 patentsUS11404091B2Aug 2, 2022
Memory array word line routing
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11563015B2Jan 24, 2023
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11532752B2Dec 20, 2022
Non-volatile memory device with reduced area
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11282816B2Mar 22, 2022
Memory packages and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11238904B1Feb 1, 2022
Using embedded switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11735280B2Aug 22, 2023
Memory device and operating method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations85
US11521663B2Dec 6, 2022
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11094387B2Aug 17, 2021
Multi-fuse memory cell circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11018260B2May 25, 2021
Non-volatile memory device with reduced area
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10971505B1Apr 6, 2021
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12063786B2Aug 13, 2024
Compute-in-memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11776595B2Oct 3, 2023
Memory device with source line control
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US11682433B2Jun 20, 2023
Multiple stack high voltage circuit for memory
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US12062408B2Aug 13, 2024
Switches to reduce routing rails of memory system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12027220B2Jul 2, 2024
One-time-programmable memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12027204B2Jul 2, 2024
Memory including metal rails with balanced loading
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12014768B2Jun 18, 2024
DRAM computation circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12002534B2Jun 4, 2024
Memory array word line routing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11997843B2May 28, 2024
4CPP SRAM cell and array
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11942177B2Mar 26, 2024
Using embedded switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915787B2Feb 27, 2024
Integrated circuit device and methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901035B2Feb 13, 2024
Method of differentiated thermal throttling of memory and system therefor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11869971B2Jan 9, 2024
Multi-bit memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855046B2Dec 26, 2023
Memory packages and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11854616B2Dec 26, 2023
Memory including metal rails with balanced loading
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856762B2Dec 26, 2023
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848381B2Dec 19, 2023
Methods of operating multi-bit memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11837300B2Dec 5, 2023
Multi-fuse memory cell circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11810635B2Nov 7, 2023
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11791005B2Oct 17, 2023
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11756591B2Sep 12, 2023
Switches to reduce routing rails of memory system
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11756640B2Sep 12, 2023
MIM efuse memory devices and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11749664B2Sep 5, 2023
Memory circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742021B2Aug 29, 2023
Memory device with write pulse trimming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11681468B2Jun 20, 2023
Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11676648B2Jun 13, 2023
Current steering in reading magnetic tunnel junction
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11653492B2May 16, 2023
Memory devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11605639B2Mar 14, 2023
One-time-programmable memory device including an antifuse structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11605427B2Mar 14, 2023
Memory device with write pulse trimming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11601117B1Mar 7, 2023
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
INTEL CORP
6 patentsUS9041146B2May 26, 2015
Logic chip including embedded magnetic tunnel junctions
INTEL CORP30 citations93
US11469268B2Oct 11, 2022
Damascene-based approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures
INTEL CORP8 citations86
US10916583B2Feb 9, 2021
Monolithic integrated circuits with multiple types of embedded non-volatile memory devices
INTEL CORP12 citations86
US9953986B2Apr 24, 2018
Method and apparatus for improving read margin for an SRAM bit-cell
INTEL CORP11 citations84
US9997563B2Jun 12, 2018
Logic chip including embedded magnetic tunnel junctions
INTEL CORP8 citations83
US9660181B2May 23, 2017
Logic chip including embedded magnetic tunnel junctions
INTEL CORP7 citations83
WANG YIH
2 patentsDRAY CYRILLE
1 patentKOLAR PRAMOD
1 patentShowing the top 50 of 238 patents by PatentIndex Score.