P

Inventor

WANG YIH

TW238 patents
⚠️ This page may combine multiple inventors who share the name “WANG YIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

40 patents
US11404091B2Aug 2, 2022

Memory array word line routing

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11563015B2Jan 24, 2023

Memory devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11532752B2Dec 20, 2022

Non-volatile memory device with reduced area

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11282816B2Mar 22, 2022

Memory packages and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11238904B1Feb 1, 2022

Using embedded switches for reducing capacitive loading on a memory system

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11735280B2Aug 22, 2023

Memory device and operating method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations85
US11521663B2Dec 6, 2022

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11094387B2Aug 17, 2021

Multi-fuse memory cell circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11018260B2May 25, 2021

Non-volatile memory device with reduced area

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10971505B1Apr 6, 2021

Memory devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12063786B2Aug 13, 2024

Compute-in-memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11776595B2Oct 3, 2023

Memory device with source line control

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US11682433B2Jun 20, 2023

Multiple stack high voltage circuit for memory

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US12062408B2Aug 13, 2024

Switches to reduce routing rails of memory system

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12027220B2Jul 2, 2024

One-time-programmable memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12027204B2Jul 2, 2024

Memory including metal rails with balanced loading

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12014768B2Jun 18, 2024

DRAM computation circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12002534B2Jun 4, 2024

Memory array word line routing

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11997843B2May 28, 2024

4CPP SRAM cell and array

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11942177B2Mar 26, 2024

Using embedded switches for reducing capacitive loading on a memory system

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915787B2Feb 27, 2024

Integrated circuit device and methods

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901035B2Feb 13, 2024

Method of differentiated thermal throttling of memory and system therefor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11869971B2Jan 9, 2024

Multi-bit memory storage device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855046B2Dec 26, 2023

Memory packages and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11854616B2Dec 26, 2023

Memory including metal rails with balanced loading

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856762B2Dec 26, 2023

Memory devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848381B2Dec 19, 2023

Methods of operating multi-bit memory storage device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11837300B2Dec 5, 2023

Multi-fuse memory cell circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11810635B2Nov 7, 2023

Sense amplifier for coupling effect reduction

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11791005B2Oct 17, 2023

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11756591B2Sep 12, 2023

Switches to reduce routing rails of memory system

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11756640B2Sep 12, 2023

MIM efuse memory devices and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11749664B2Sep 5, 2023

Memory circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742021B2Aug 29, 2023

Memory device with write pulse trimming

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11681468B2Jun 20, 2023

Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11676648B2Jun 13, 2023

Current steering in reading magnetic tunnel junction

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11653492B2May 16, 2023

Memory devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11605639B2Mar 14, 2023

One-time-programmable memory device including an antifuse structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11605427B2Mar 14, 2023

Memory device with write pulse trimming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11601117B1Mar 7, 2023

Sense amplifier for coupling effect reduction

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

INTEL CORP

6 patents

WANG YIH

2 patents

DRAY CYRILLE

1 patent

KOLAR PRAMOD

1 patent

Showing the top 50 of 238 patents by PatentIndex Score.