P

Inventor

MATSUURA MASAZUMI

JP39 patents
⚠️ This page may combine multiple inventors who share the name “MATSUURA MASAZUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

23 patents
US5319247AJun 7, 1994

Semiconductor device having an interlayer insulating film of high crack resistance

MITSUBISHI ELECTRIC CORP319 citations99
US6124641ASep 26, 2000

Semiconductor device organic insulator film

MITSUBISHI ELECTRIC CORP105 citations98
US5703404ADec 30, 1997

Semiconductor device comprising an SiOF insulative film

MITSUBISHI ELECTRIC CORP100 citations98
US5598027AJan 28, 1997

Semiconductor device and method of fabricating the same

MITSUBISHI ELECTRIC CORP105 citations98
US5926732AJul 20, 1999

Method of making a semiconductor device

MITSUBISHI ELECTRIC CORP74 citations96
US5459105AOct 17, 1995

Method of manufacturing a semiconductor device having multilayer insulating films

MITSUBISHI ELECTRIC CORP48 citations96
US6034418AMar 7, 2000

Semiconductor device having improved insulation film and manufacturing method thereof

MITSUBISHI ELECTRIC CORP27 citations92
US5811849ASep 22, 1998

Semiconductor device and manufacturing process thereof

MITSUBISHI ELECTRIC CORP24 citations92
US5047127ASep 10, 1991

Ozone generating method

MITSUBISHI ELECTRIC CORP22 citations92
US5250468AOct 5, 1993

Method of manufacturing semiconductor device including interlaying insulating film

MITSUBISHI ELECTRIC CORP21 citations91
US5132774AJul 21, 1992

Semiconductor device including interlayer insulating film

MITSUBISHI ELECTRIC CORP29 citations91
US5177588AJan 5, 1993

Semiconductor device including nitride layer

MITSUBISHI ELECTRIC CORP41 citations87
US5937322AAug 10, 1999

Semiconductor manufacturing process with oxide film formed on an uneven surface pattern

MITSUBISHI ELECTRIC CORP16 citations82
US6333278B1Dec 25, 2001

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP5 citations74
US6228778B1May 8, 2001

Semiconductor device having improved insulation film and manufacturing method thereof

MITSUBISHI ELECTRIC CORP6 citations74
US6399424B1Jun 4, 2002

Method of manufacturing contact structure

MITSUBISHI ELECTRIC CORP11 citations73
US7208408B2Apr 24, 2007

Method for fabricating a dual damascene contact in an insulating film having density gradually varying in the thickness direction

MITSUBISHI ELECTRIC CORP6 citations72
US6930394B2Aug 16, 2005

Electronic device includes an insulating film having density or carbon concentration varying gradually in the direction of the thickness and a conductive film formed therein

MITSUBISHI ELECTRIC CORP7 citations72
US5985769ANov 16, 1999

Method of forming an interlayer insulating film

MITSUBISHI ELECTRIC CORP6 citations63
US5721156AFeb 24, 1998

Method of manufacturing a semiconductor device with a planarized integrated circuit

MITSUBISHI ELECTRIC CORP4 citations63
US6509648B1Jan 21, 2003

Method of manufacturing semiconductor device and semiconductor device

MITSUBISHI ELECTRIC CORP2 citations62
US6222256B1Apr 24, 2001

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP3 citations62
US6551921B2Apr 22, 2003

Method of polishing a stack of dielectric layers including a fluorine containing silicon oxide layer

MITSUBISHI ELECTRIC CORP0 citations52

RENESAS ELECTRONICS CORP

8 patents

RENESAS TECH CORP

6 patents

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

1 patent

FURUSAWA TAKESHI

1 patent