Inventor
MATSUURA MASAZUMI
JP39 patents
⚠️ This page may combine multiple inventors who share the name “MATSUURA MASAZUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
23 patentsUS5319247AJun 7, 1994
Semiconductor device having an interlayer insulating film of high crack resistance
MITSUBISHI ELECTRIC CORP319 citations99
US6124641ASep 26, 2000
Semiconductor device organic insulator film
MITSUBISHI ELECTRIC CORP105 citations98
US5703404ADec 30, 1997
Semiconductor device comprising an SiOF insulative film
MITSUBISHI ELECTRIC CORP100 citations98
US5598027AJan 28, 1997
Semiconductor device and method of fabricating the same
MITSUBISHI ELECTRIC CORP105 citations98
US5926732AJul 20, 1999
Method of making a semiconductor device
MITSUBISHI ELECTRIC CORP74 citations96
US5459105AOct 17, 1995
Method of manufacturing a semiconductor device having multilayer insulating films
MITSUBISHI ELECTRIC CORP48 citations96
US6034418AMar 7, 2000
Semiconductor device having improved insulation film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP27 citations92
US5811849ASep 22, 1998
Semiconductor device and manufacturing process thereof
MITSUBISHI ELECTRIC CORP24 citations92
US5047127ASep 10, 1991
Ozone generating method
MITSUBISHI ELECTRIC CORP22 citations92
US5250468AOct 5, 1993
Method of manufacturing semiconductor device including interlaying insulating film
MITSUBISHI ELECTRIC CORP21 citations91
US5132774AJul 21, 1992
Semiconductor device including interlayer insulating film
MITSUBISHI ELECTRIC CORP29 citations91
US5177588AJan 5, 1993
Semiconductor device including nitride layer
MITSUBISHI ELECTRIC CORP41 citations87
US5937322AAug 10, 1999
Semiconductor manufacturing process with oxide film formed on an uneven surface pattern
MITSUBISHI ELECTRIC CORP16 citations82
US6333278B1Dec 25, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP5 citations74
US6228778B1May 8, 2001
Semiconductor device having improved insulation film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP6 citations74
US6399424B1Jun 4, 2002
Method of manufacturing contact structure
MITSUBISHI ELECTRIC CORP11 citations73
US7208408B2Apr 24, 2007
Method for fabricating a dual damascene contact in an insulating film having density gradually varying in the thickness direction
MITSUBISHI ELECTRIC CORP6 citations72
US6930394B2Aug 16, 2005
Electronic device includes an insulating film having density or carbon concentration varying gradually in the direction of the thickness and a conductive film formed therein
MITSUBISHI ELECTRIC CORP7 citations72
US5985769ANov 16, 1999
Method of forming an interlayer insulating film
MITSUBISHI ELECTRIC CORP6 citations63
US5721156AFeb 24, 1998
Method of manufacturing a semiconductor device with a planarized integrated circuit
MITSUBISHI ELECTRIC CORP4 citations63
US6509648B1Jan 21, 2003
Method of manufacturing semiconductor device and semiconductor device
MITSUBISHI ELECTRIC CORP2 citations62
US6222256B1Apr 24, 2001
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP3 citations62
US6551921B2Apr 22, 2003
Method of polishing a stack of dielectric layers including a fluorine containing silicon oxide layer
MITSUBISHI ELECTRIC CORP0 citations52
RENESAS ELECTRONICS CORP
8 patentsUS8018030B2Sep 13, 2011
Semiconductor chip with seal ring and sacrificial corner pattern
RENESAS ELECTRONICS CORP7 citations84
US9245800B2Jan 26, 2016
Method of manufacturing a semiconductor device
RENESAS ELECTRONICS CORP3 citations73
US9035460B2May 19, 2015
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP3 citations63
US9368459B2Jun 14, 2016
Semiconductor chip with seal ring and sacrificial corner pattern
RENESAS ELECTRONICS CORP1 citations62
US9991162B2Jun 5, 2018
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations52
US9721873B2Aug 1, 2017
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations52
US7981790B2Jul 19, 2011
Semiconductor device and method of fabricating the same
RENESAS ELECTRONICS CORP0 citations52
US7960279B2Jun 14, 2011
Semiconductor device and manufacturing method therefor
RENESAS ELECTRONICS CORP0 citations52
RENESAS TECH CORP
6 patentsUS7605448B2Oct 20, 2009
Semiconductor device with seal ring
RENESAS TECH CORP22 citations92
US6737746B2May 18, 2004
Semiconductor device containing copper diffusion preventive film of silicon carbide
RENESAS TECH CORP17 citations84
US6903027B2Jun 7, 2005
Method of forming dielectric film and dielectric film
RENESAS TECH CORP9 citations74
US7671473B2Mar 2, 2010
Semiconductor device and method of fabricating the same
RENESAS TECH CORP2 citations62
US7602063B2Oct 13, 2009
Semiconductor device and manufacturing method therefor
RENESAS TECH CORP2 citations62
US6737319B2May 18, 2004
Method of manufacturing semiconductor device and semiconductor device
RENESAS TECH CORP3 citations62