Inventor
SHIN HYUN-BO
KR5 patents
Patents
5 patentsUS6385020B1May 7, 2002
Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD69 citations96
US5854095ADec 29, 1998
Dual source gas methods for forming integrated circuit capacitor electrodes
SAMSUNG ELECTRONICS CO LTD27 citations91
US5885867AMar 23, 1999
Methods of forming hemispherical grained silicon layers including anti-nucleation gases
SAMSUNG ELECTRONICS CO LTD17 citations82
US6238968B1May 29, 2001
Methods of forming integrated circuit capacitors having protected layers of HSG silicon therein
SAMSUNG ELECTRONICS CO LTD18 citations80
US6284632B1Sep 4, 2001
Method for manufacturing semiconductor device with stagnated process gas
SAMSUNG ELECTRONICS CO LTD0 citations50