Inventor
KAWAMURA SHOICHI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KAWAMURA SHOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
12 patentsUS6707714B2Mar 16, 2004
Read disturb alleviated flash memory
FUJITSU LTD76 citations98
US6288944B1Sep 11, 2001
NAND type nonvolatile memory with improved erase-verify operations
FUJITSU LTD144 citations98
US6670669B1Dec 30, 2003
Multiple-bit non-volatile memory utilizing non-conductive charge trapping gate
FUJITSU LTD60 citations96
US6614686B1Sep 2, 2003
Nonvolatile memory circuit for recording multiple bit information
FUJITSU LTD58 citations96
US6288940B1Sep 11, 2001
Non-volatile semiconductor memory device
FUJITSU LTD62 citations96
US6925005B2Aug 2, 2005
AC sensing method memory circuit
FUJITSU LTD31 citations92
US6826081B2Nov 30, 2004
Nonvolatile semiconductor memory device, nonvolatile semiconductor memory device-integrated system, and defective block detecting method
FUJITSU LTD27 citations92
US6747894B2Jun 8, 2004
Nonvolatile multilevel cell memory
FUJITSU LTD31 citations92
US6288936B1Sep 11, 2001
Nonvolatile memory for storing multivalue data
FUJITSU LTD49 citations92
US6266271B1Jul 24, 2001
Nonvolatile semiconductor memory for preventing unauthorized copying
FUJITSU LTD30 citations92
US6259630B1Jul 10, 2001
Nonvolatile semiconductor memory device equipped with verification circuit for identifying the address of a defective cell
FUJITSU LTD18 citations84
US6738288B2May 18, 2004
Semiconductor memory
FUJITSU LTD11 citations74
ADVANCED MICRO DEVICES INC
7 patentsUS5821800AOct 13, 1998
High-voltage CMOS level shifter
ADVANCED MICRO DEVICES INC144 citations98
US6266275B1Jul 24, 2001
Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memory
ADVANCED MICRO DEVICES INC41 citations95
US5978267ANov 2, 1999
Bit line biasing method to eliminate program disturbance in a non-volatile memory device and memory device employing the same
ADVANCED MICRO DEVICES INC48 citations92
US5912489AJun 15, 1999
Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
ADVANCED MICRO DEVICES INC38 citations92
US5801579ASep 1, 1998
High voltage NMOS pass gate for integrated circuit with high voltage generator
ADVANCED MICRO DEVICES INC22 citations92
US5852576ADec 22, 1998
High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate
ADVANCED MICRO DEVICES INC21 citations90
US5999452ADec 7, 1999
Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for NAND array flash memory
ADVANCED MICRO DEVICES INC10 citations73
KAWAMURA SHOICHI
3 patentsUS8477524B2Jul 2, 2013
Nonvolatile memory devices and related methods and systems
KAWAMURA SHOICHI5 citations71
US8605512B2Dec 10, 2013
Nonvolatile semiconductor memory device and method of operating a nonvolatile memory device
KAWAMURA SHOICHI3 citations59
US8264891B2Sep 11, 2012
Erase method and non-volatile semiconductor memory
KAWAMURA SHOICHI0 citations39
SAMSUNG ELECTRONICS CO LTD
3 patentsUS7872917B2Jan 18, 2011
Non-volatile semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US8040730B2Oct 18, 2011
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations58
US7499318B2Mar 3, 2009
Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operation
SAMSUNG ELECTRONICS CO LTD0 citations51