Inventor
MATSUI MICHIHARU
JP25 patents
⚠️ This page may combine multiple inventors who share the name “MATSUI MICHIHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
23 patentsUS6894341B2May 17, 2005
Semiconductor device and manufacturing method
TOSHIBA KK61 citations96
US6853029B2Feb 8, 2005
Non-volatile semiconductor memory device with multi-layer gate structure
TOSHIBA KK58 citations96
US6835978B2Dec 28, 2004
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK43 citations96
US6661052B2Dec 9, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK34 citations96
US7939406B2May 10, 2011
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations93
US7573092B2Aug 11, 2009
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations93
US7049653B2May 23, 2006
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK18 citations93
US7045423B2May 16, 2006
Non-volatile semiconductor memory device with multi-layer gate structure
TOSHIBA KK24 citations93
US6844590B2Jan 18, 2005
Semiconductor device with trench isolation between two regions having different gate insulating films
TOSHIBA KK20 citations93
US6441427B1Aug 27, 2002
NOR-type flash memory and method for manufacturing the same
TOSHIBA KK21 citations92
US6902976B2Jun 7, 2005
Semiconductor device and method of manufacturing the same
TOSHIBA KK12 citations84
US6927449B2Aug 9, 2005
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK9 citations82
US7449745B2Nov 11, 2008
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK5 citations74
US7382016B2Jun 3, 2008
Semiconductor device and method of manufacturing the same
TOSHIBA KK7 citations74
US7352027B2Apr 1, 2008
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK6 citations74
US7348627B2Mar 25, 2008
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK5 citations74
US6998673B2Feb 14, 2006
Semiconductor device and method of manufacturing the same
TOSHIBA KK7 citations74
US6969660B2Nov 29, 2005
Method of manufacturing a semiconductor device with trench isolation between two regions having different gate insulating films
TOSHIBA KK8 citations74
US5559736ASep 24, 1996
Non-volatile semiconductor memory device capable of preventing excessive-writing
TOSHIBA KK13 citations73
US7538380B2May 26, 2009
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK1 citations63
US7504294B2Mar 17, 2009
Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)
TOSHIBA KK3 citations63
US7417281B2Aug 26, 2008
Semiconductor device with a selection gate and a peripheral gate
TOSHIBA KK2 citations63
US9059300B2Jun 16, 2015
Nonvolatile semiconductor memory device having element isolating region of trench type
TOSHIBA KK1 citations52