Inventor
DAI CHANG-MING
TW23 patents
⚠️ This page may combine multiple inventors who share the name “DAI CHANG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IND TECH RES INST
16 patentsUS5935762AAug 10, 1999
Two-layered TSI process for dual damascene patterning
IND TECH RES INST118 citations98
US5882996AMar 16, 1999
Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer
IND TECH RES INST108 citations98
US5877076AMar 2, 1999
Opposed two-layered photoresist process for dual damascene patterning
IND TECH RES INST98 citations98
US5670404ASep 23, 1997
Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer
IND TECH RES INST98 citations98
US5877075AMar 2, 1999
Dual damascene process using single photoresist process
IND TECH RES INST65 citations96
US5976968ANov 2, 1999
Single-mask dual damascene processes by using phase-shifting mask
IND TECH RES INST38 citations92
US5916717AJun 29, 1999
Process utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masks
IND TECH RES INST24 citations92
US6045954AApr 4, 2000
Formation of silicon nitride film for a phase shift mask at 193 nm
IND TECH RES INST29 citations89
US5710076AJan 20, 1998
Method for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coating
IND TECH RES INST52 citations89
US5691215ANov 25, 1997
Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure
IND TECH RES INST59 citations89
US5604157AFeb 18, 1997
Reduced notching of polycide gates using silicon anti reflection layer
IND TECH RES INST39 citations87
US6180512B1Jan 30, 2001
Single-mask dual damascene processes by using phase-shifting mask
IND TECH RES INST15 citations84
US6291118B1Sep 18, 2001
Elimination of proximity effect in photoresist
IND TECH RES INST8 citations74
US5670281ASep 23, 1997
Masks and methods of forming masks which avoid phase conflict problems in phase shifting masks
IND TECH RES INST16 citations74
US6319568B1Nov 20, 2001
Formation of silicon nitride film for a phase shift mask at 193 nm
IND TECH RES INST9 citations71
US6040119AMar 21, 2000
Elimination of proximity effect in photoresist
IND TECH RES INST1 citations52
TAIWAN SEMICONDUCTOR MFG
6 patentsUS7131102B2Oct 31, 2006
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
TAIWAN SEMICONDUCTOR MFG15 citations92
US6711732B1Mar 23, 2004
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
TAIWAN SEMICONDUCTOR MFG25 citations92
US6660653B1Dec 9, 2003
Dual trench alternating phase shift mask fabrication
TAIWAN SEMICONDUCTOR MFG19 citations89
US7036108B2Apr 25, 2006
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
TAIWAN SEMICONDUCTOR MFG1 citations62
US7013453B2Mar 14, 2006
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA
TAIWAN SEMICONDUCTOR MFG1 citations62
US6830702B2Dec 14, 2004
Single trench alternating phase shift mask fabrication
TAIWAN SEMICONDUCTOR MFG4 citations60