Inventor
TASKAR NIKHIL R
US18 patents
⚠️ This page may combine multiple inventors who share the name “TASKAR NIKHIL R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PHILIPS CORP
4 patentsUS5915164AJun 22, 1999
Methods of making high voltage GaN-A1N based semiconductor devices
PHILIPS CORP55 citations95
US5786233AJul 28, 1998
Photo-assisted annealing process for activation of acceptors in semiconductor compound layers
PHILIPS CORP32 citations92
US5227328AJul 13, 1993
Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations
PHILIPS CORP20 citations82
US5293074AMar 8, 1994
Ohmic contact to p-type ZnSe
PHILIPS CORP6 citations73
NANOCRYSTAL IMAGING CORP
4 patentsUS6300640B1Oct 9, 2001
Composite nanophosphor screen for detecting radiation having optically reflective coatings
NANOCRYSTAL IMAGING CORP40 citations91
US6452184B1Sep 17, 2002
Microchannel high resolution x-ray sensor having an integrated photomultiplier
NANOCRYSTAL IMAGING CORP53 citations90
US6534772B1Mar 18, 2003
High resolution high output microchannel based radiation sensor
NANOCRYSTAL IMAGING CORP24 citations89
US6885004B2Apr 26, 2005
High resolution tiled microchannel storage phosphor based radiation sensor
NANOCRYSTAL IMAGING CORP17 citations77
PHILIPS ELECTRONICS NA
4 patentsUS5624293AApr 29, 1997
Gas discharge lamps and lasers fabricated by micromachining methodology
PHILIPS ELECTRONICS NA2 citations62
US5547897AAug 20, 1996
Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
PHILIPS ELECTRONICS NA4 citations62
US6113691ASep 5, 2000
Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced
PHILIPS ELECTRONICS NA1 citations51
US5399524AMar 21, 1995
Method of providing an ohmic type contact on p-type Zn(S)Se
PHILIPS ELECTRONICS NA0 citations51