Inventor

MITLEHNER HEINZ

DE42 patents

⚠️ This page may combine multiple inventors who share the name “MITLEHNER HEINZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITLEHNER HEINZ

SIEMENS AG

Hybrid power MOSFET

Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses

Method and device for disconnecting a cascode circuit with voltage-controlled semiconductor switches

Semiconductor component having an edge termination means with high field blocking capability

Electronic switching device having at least two semiconductor components

Electronic switching device

Electronic switching device and an operating method thereof

Hybrid power MOSFET for high current-carrying capacity

Semiconductor configuration and current limiting device

Silicon-based semiconductor component with high-efficiency barrier junction termination

Method for reducing losses during the commutation process

Semiconductor component

Nonlinear current limiting precharging circuit for a capacitor connected to an output of a line-commutated power converter

Electronic switch for use with inductive loads

Current-limiting semiconductor configuration

AC controller

Electronic branch switching device

Schottky power diode

Method for increasing the electric strength of a multi-layer semiconductor component

Method for the manufacturing of a thyristor with defined lateral resistor

Thyristor having adjustable breakover voltage and method of manufacture

Schottky power diode

Protection device for low voltage networks

Switching device

Process for manufacturing thyristor with adjustable breakover voltage

Light-triggerable thyristor having low-loss feed of the trigger energy

Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation

Solid-state switching element with two source electrodes and solid-state switch with such an element

SICED ELECT DEV GMBH & CO KG

Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Switching device for switching at a high operating voltage

Semiconductor construction with buried island region and contact region

Junction field-effect transistor with more highly doped connecting region

Semiconductor configuration and use thereof

Device for limiting alternating electric currents, in particular in the event of a short circuit

J-FET semiconductor configuration

Semiconductor structure with a switch element and an edge element

INFINEON TECHNOLOGIES AG

Vertical semiconductor component having a reduced electrical surface field

Silicon carbide junction field effect transistor

ELLISON ALEXANDRE

Lightly doped silicon carbide wafer and use thereof in high power devices

Lightly doped silicon carbide wafer and use thereof in high power devices

INFINEON TECHNOLOGIES AUSTRIA

Method for making an integrated circuit including vertical junction field effect transistors

NORSTEL AB

Lightly doped silicon carbide wafer and use thereof in high power devices