P

Inventor

CHEN CHIA-LIN

TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHIA-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

24 patents
US7259050B2Aug 21, 2007

Semiconductor device and method of making the same

TAIWAN SEMICONDUCTOR MFG75 citations98
US7052946B2May 30, 2006

Method for selectively stressing MOSFETs to improve charge carrier mobility

TAIWAN SEMICONDUCTOR MFG84 citations98
US7268575B1Sep 11, 2007

Method of NBTI prediction

TAIWAN SEMICONDUCTOR MFG41 citations94
US7176138B2Feb 13, 2007

Selective nitride liner formation for shallow trench isolation

TAIWAN SEMICONDUCTOR MFG15 citations92
US7118974B2Oct 10, 2006

Method of generating multiple oxides by plasma nitridation on oxide

TAIWAN SEMICONDUCTOR MFG22 citations92
US7071066B2Jul 4, 2006

Method and structure for forming high-k gates

TAIWAN SEMICONDUCTOR MFG46 citations92
US6759302B1Jul 6, 2004

Method of generating multiple oxides by plasma nitridation on oxide

TAIWAN SEMICONDUCTOR MFG35 citations92
US6737362B1May 18, 2004

Method for manufacturing a thin gate dielectric layer for integrated circuit fabrication

TAIWAN SEMICONDUCTOR MFG20 citations92
US6821868B2Nov 23, 2004

Method of forming nitrogen enriched gate dielectric with low effective oxide thickness

TAIWAN SEMICONDUCTOR MFG33 citations88
US7579859B2Aug 25, 2009

Method for determining time dependent dielectric breakdown

TAIWAN SEMICONDUCTOR MFG11 citations84
US7820457B2Oct 26, 2010

Method of NBTI prediction

TAIWAN SEMICONDUCTOR MFG10 citations82
US7696578B2Apr 13, 2010

Selective CESL structure for CMOS application

TAIWAN SEMICONDUCTOR MFG10 citations78
US7138317B2Nov 21, 2006

Method of generating multiple oxides by plasma nitridation on oxide

TAIWAN SEMICONDUCTOR MFG9 citations74
US6861339B2Mar 1, 2005

Method for fabricating laminated silicon gate electrode

TAIWAN SEMICONDUCTOR MFG7 citations74
US6780741B2Aug 24, 2004

Method of forming a novel gate electrode structure comprised of a silicon-germanium layer located between random grained polysilicon layers

TAIWAN SEMICONDUCTOR MFG9 citations74
US7327009B2Feb 5, 2008

Selective nitride liner formation for shallow trench isolation

TAIWAN SEMICONDUCTOR MFG5 citations73
US6933157B2Aug 23, 2005

Semiconductor wafer manufacturing methods employing cleaning delay period

TAIWAN SEMICONDUCTOR MFG2 citations63
US6830996B2Dec 14, 2004

Device performance improvement by heavily doped pre-gate and post polysilicon gate clean

TAIWAN SEMICONDUCTOR MFG3 citations63
US7361572B2Apr 22, 2008

STI liner modification method

TAIWAN SEMICONDUCTOR MFG4 citations62
US7012009B2Mar 14, 2006

Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process

TAIWAN SEMICONDUCTOR MFG6 citations62
US7316970B2Jan 8, 2008

Method for forming high selectivity protection layer on semiconductor device

TAIWAN SEMICONDUCTOR MFG0 citations52
US7229919B2Jun 12, 2007

Semiconductor device having a random grained polysilicon layer and a method for its manufacture

TAIWAN SEMICONDUCTOR MFG0 citations52
US7166525B2Jan 23, 2007

High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer

TAIWAN SEMICONDUCTOR MFG1 citations52
US7453280B1Nov 18, 2008

Method for testing semiconductor devices

TAIWAN SEMICONDUCTOR MFG1 citations49

CHEN CHIA-LIN

3 patents

CHEN CHIA LIN

2 patents

VANGUARD INT SEMICONDUCT CORP

2 patents

INNOLUX CORP

1 patent

ACADEMIA SINICA

1 patent

WU CHIH-TA

1 patent

QISDA CORP

1 patent