Inventor
KUGE SHIGEHIRO
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KUGE SHIGEHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
14 patentsUS6339553B1Jan 15, 2002
Clock generating circuit having additional delay line outside digital DLL loop and semiconductor memory device including the same
MITSUBISHI ELECTRIC CORP91 citations98
US6404056B1Jun 11, 2002
Semiconductor integrated circuit
MITSUBISHI ELECTRIC CORP69 citations96
US5818772AOct 6, 1998
Semiconductor memory devices having a built-in test function
MITSUBISHI ELECTRIC CORP56 citations96
US6438067B2Aug 20, 2002
Clock generating circuit ensuring a wide lock-allowing frequency range and allowing reduction in layout area as well as a semiconductor device provided with the same
MITSUBISHI ELECTRIC CORP23 citations93
US5969420AOct 19, 1999
Semiconductor device comprising a plurality of interconnection patterns
MITSUBISHI ELECTRIC CORP24 citations93
US5604707AFeb 18, 1997
Semiconductor memory device responsive to hierarchical internal potentials
MITSUBISHI ELECTRIC CORP51 citations93
US6597031B2Jul 22, 2003
Ovonic unified memory device and magnetic random access memory device
MITSUBISHI ELECTRIC CORP35 citations92
US6466496B2Oct 15, 2002
Semiconductor integrated circuit having circuit for data transmission distance measurement and memory processing system with the same
MITSUBISHI ELECTRIC CORP21 citations92
US6351169B2Feb 26, 2002
Internal clock signal generating circuit permitting rapid phase lock
MITSUBISHI ELECTRIC CORP16 citations84
US5847420ADec 8, 1998
Semiconductor integrated circuit having three wiring layers
MITSUBISHI ELECTRIC CORP15 citations82
US6424593B1Jul 23, 2002
Semiconductor memory device capable of adjusting internal parameter
MITSUBISHI ELECTRIC CORP11 citations74
US6414891B2Jul 2, 2002
Semiconductor device including complementary data bus pair
MITSUBISHI ELECTRIC CORP8 citations74
US6388329B1May 14, 2002
Semiconductor integrated circuit having three wiring layers
MITSUBISHI ELECTRIC CORP6 citations74
US6157052ADec 5, 2000
Semiconductor integrated circuit having three wiring layers
MITSUBISHI ELECTRIC CORP13 citations74
RENESAS TECH CORP
12 patentsUS6731535B1May 4, 2004
Nonvolatile semiconductor memory device
RENESAS TECH CORP167 citations99
US6715096B2Mar 30, 2004
Interface circuit device for performing data sampling at optimum strobe timing by using stored data window information to determine the strobe timing
RENESAS TECH CORP76 citations98
US7157773B2Jan 2, 2007
Nonvolatile semiconductor memory device
RENESAS TECH CORP26 citations93
US6850454B2Feb 1, 2005
Semiconductor memory device with reduced current consumption during standby state
RENESAS TECH CORP52 citations93
US6962827B1Nov 8, 2005
Semiconductor device capable of shortening test time and suppressing increase in chip area, and method of manufacturing semiconductor integrated circuit device
RENESAS TECH CORP29 citations92
US6777976B2Aug 17, 2004
Interface circuit and semiconductor device with the same
RENESAS TECH CORP24 citations92
US6809975B2Oct 26, 2004
Semiconductor memory device having test mode and memory system using the same
RENESAS TECH CORP19 citations90
US7365578B2Apr 29, 2008
Semiconductor device with pump circuit
RENESAS TECH CORP5 citations74
US7268612B2Sep 11, 2007
Semiconductor device with pump circuit
RENESAS TECH CORP5 citations74
US6781900B2Aug 24, 2004
Semiconductor memory device with enhanced reliability
RENESAS TECH CORP8 citations74
US7180362B2Feb 20, 2007
Semiconductor device with pump circuit
RENESAS TECH CORP4 citations63
US6897523B2May 24, 2005
Semiconductor device
RENESAS TECH CORP3 citations63