Inventor
YANG WON SUK
KR37 patents
⚠️ This page may combine multiple inventors who share the name “YANG WON SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS5296410AMar 22, 1994
Method for separating fine patterns of a semiconductor device
SAMSUNG ELECTRONICS CO LTD80 citations96
US6573545B2Jun 3, 2003
Semiconductor memory device for eliminating floating body effect and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations93
US6836019B2Dec 28, 2004
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD17 citations92
US6787906B1Sep 7, 2004
Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region
SAMSUNG ELECTRONICS CO LTD36 citations92
US6764941B2Jul 20, 2004
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD33 citations92
US6518671B1Feb 11, 2003
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD18 citations92
US6350649B1Feb 26, 2002
Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD48 citations92
US6337267B1Jan 8, 2002
Method for fabricating a semiconductor memory device and the structure thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US8354579B2Jan 15, 2013
Music linked photocasting service system and method
SAMSUNG ELECTRONICS CO LTD31 citations91
US5358893AOct 25, 1994
Isolation method for semiconductor device
SAMSUNG ELECTRONICS CO LTD37 citations87
US6531758B2Mar 11, 2003
Semiconductor integrated circuit with resistor and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD13 citations84
US6136657AOct 24, 2000
Method for fabricating a semiconductor device having different gate oxide layers
SAMSUNG ELECTRONICS CO LTD18 citations84
US6953959B2Oct 11, 2005
Integrated circuit devices including self-aligned contacts with increased alignment margin
SAMSUNG ELECTRONICS CO LTD10 citations74
US6806140B1Oct 19, 2004
Semiconductor memory device for eliminating floating body effect and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6656791B2Dec 2, 2003
Semiconductor integrated circuit with resistor and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD10 citations74
US7888198B1Feb 15, 2011
Method of fabricating a MOS transistor with double sidewall spacers in a peripheral region and single sidewall spacers in a cell region
SAMSUNG ELECTRONICS CO LTD5 citations63
US7510963B2Mar 31, 2009
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US6812572B2Nov 2, 2004
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US7250335B2Jul 31, 2007
Methods of fabricating integrated circuit devices including self-aligned contacts with increased alignment margin
SAMSUNG ELECTRONICS CO LTD0 citations52
US7164204B2Jan 16, 2007
Integrated circuit devices with an auxiliary pad for contact hole alignment
SAMSUNG ELECTRONICS CO LTD0 citations52
US6822335B2Nov 23, 2004
Method for arranging wiring line including power reinforcing line and semiconductor device having power reinforcing line
SAMSUNG ELECTRONICS CO LTD0 citations52
US6699762B2Mar 2, 2004
Methods of fabricating integrated circuit devices with contact hole alignment
SAMSUNG ELECTRONICS CO LTD0 citations52
US6596626B2Jul 22, 2003
Method for arranging wiring line including power reinforcing line and semiconductor device having power reinforcing line
SAMSUNG ELECTRONICS CO LTD0 citations52
US6329249B1Dec 11, 2001
Method for fabricating a semiconductor device having different gate oxide layers
SAMSUNG ELECTRONICS CO LTD0 citations52
US8049618B2Nov 1, 2011
Indoor location system having sensor and method for checking location using the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US6855590B2Feb 15, 2005
Method of manufacturing the semiconductor device intended to prevent a leakage current from occuring due to a gate induced drain leakage effect
SAMSUNG ELECTRONICS CO LTD1 citations51
US7462523B2Dec 9, 2008
Semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US6900546B2May 31, 2005
Semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US7602043B2Oct 13, 2009
Coupling capacitor and semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US7300888B2Nov 27, 2007
Methods of manufacturing integrated circuit devices having an encapsulated insulation layer
SAMSUNG ELECTRONICS CO LTD0 citations42
COUPANG CORP
3 patentsUS10467062B1Nov 5, 2019
Systems and methods for managing application programming interface information
COUPANG CORP12 citations81
US11755386B2Sep 12, 2023
Systems and methods for managing application programming interface information
COUPANG CORP0 citations60
US10956233B2Mar 23, 2021
Systems and methods for managing application programming interface information
COUPANG CORP0 citations60