P

Inventor

YANG WON SUK

KR37 patents
⚠️ This page may combine multiple inventors who share the name “YANG WON SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US5296410AMar 22, 1994

Method for separating fine patterns of a semiconductor device

SAMSUNG ELECTRONICS CO LTD80 citations96
US6573545B2Jun 3, 2003

Semiconductor memory device for eliminating floating body effect and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD22 citations93
US6836019B2Dec 28, 2004

Semiconductor device having multilayer interconnection structure and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD17 citations92
US6787906B1Sep 7, 2004

Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region

SAMSUNG ELECTRONICS CO LTD36 citations92
US6764941B2Jul 20, 2004

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD33 citations92
US6518671B1Feb 11, 2003

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD18 citations92
US6350649B1Feb 26, 2002

Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD48 citations92
US6337267B1Jan 8, 2002

Method for fabricating a semiconductor memory device and the structure thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US8354579B2Jan 15, 2013

Music linked photocasting service system and method

SAMSUNG ELECTRONICS CO LTD31 citations91
US5358893AOct 25, 1994

Isolation method for semiconductor device

SAMSUNG ELECTRONICS CO LTD37 citations87
US6531758B2Mar 11, 2003

Semiconductor integrated circuit with resistor and method for fabricating thereof

SAMSUNG ELECTRONICS CO LTD13 citations84
US6136657AOct 24, 2000

Method for fabricating a semiconductor device having different gate oxide layers

SAMSUNG ELECTRONICS CO LTD18 citations84
US6953959B2Oct 11, 2005

Integrated circuit devices including self-aligned contacts with increased alignment margin

SAMSUNG ELECTRONICS CO LTD10 citations74
US6806140B1Oct 19, 2004

Semiconductor memory device for eliminating floating body effect and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6656791B2Dec 2, 2003

Semiconductor integrated circuit with resistor and method for fabricating thereof

SAMSUNG ELECTRONICS CO LTD10 citations74
US7888198B1Feb 15, 2011

Method of fabricating a MOS transistor with double sidewall spacers in a peripheral region and single sidewall spacers in a cell region

SAMSUNG ELECTRONICS CO LTD5 citations63
US7510963B2Mar 31, 2009

Semiconductor device having multilayer interconnection structure and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US6812572B2Nov 2, 2004

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD4 citations62
US7250335B2Jul 31, 2007

Methods of fabricating integrated circuit devices including self-aligned contacts with increased alignment margin

SAMSUNG ELECTRONICS CO LTD0 citations52
US7164204B2Jan 16, 2007

Integrated circuit devices with an auxiliary pad for contact hole alignment

SAMSUNG ELECTRONICS CO LTD0 citations52
US6822335B2Nov 23, 2004

Method for arranging wiring line including power reinforcing line and semiconductor device having power reinforcing line

SAMSUNG ELECTRONICS CO LTD0 citations52
US6699762B2Mar 2, 2004

Methods of fabricating integrated circuit devices with contact hole alignment

SAMSUNG ELECTRONICS CO LTD0 citations52
US6596626B2Jul 22, 2003

Method for arranging wiring line including power reinforcing line and semiconductor device having power reinforcing line

SAMSUNG ELECTRONICS CO LTD0 citations52
US6329249B1Dec 11, 2001

Method for fabricating a semiconductor device having different gate oxide layers

SAMSUNG ELECTRONICS CO LTD0 citations52
US8049618B2Nov 1, 2011

Indoor location system having sensor and method for checking location using the same

SAMSUNG ELECTRONICS CO LTD1 citations51
US6855590B2Feb 15, 2005

Method of manufacturing the semiconductor device intended to prevent a leakage current from occuring due to a gate induced drain leakage effect

SAMSUNG ELECTRONICS CO LTD1 citations51
US7462523B2Dec 9, 2008

Semiconductor memory device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations48
US6900546B2May 31, 2005

Semiconductor memory device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations48
US7602043B2Oct 13, 2009

Coupling capacitor and semiconductor memory device using the same

SAMSUNG ELECTRONICS CO LTD0 citations42
US7300888B2Nov 27, 2007

Methods of manufacturing integrated circuit devices having an encapsulated insulation layer

SAMSUNG ELECTRONICS CO LTD0 citations42

COUPANG CORP

3 patents

PARK JIN-KYU

1 patent

MEDICINAL BIOCONVERGENCE RES CT

1 patent

REGENTREE LLC

1 patent

YANG CHAN-SEOK

1 patent